MBE-grown ScN on GaN, AlN, and 6H-SiC forms cubic rocksalt (111) twinned films with degenerate n-type carrier concentrations around 1e20 cm^-3.
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Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
MBE-grown ScN on GaN, AlN, and 6H-SiC forms cubic rocksalt (111) twinned films with degenerate n-type carrier concentrations around 1e20 cm^-3.