A defect-chemistry-consistent phase-field model shows that charge transition levels govern space-charge layer characteristics and produce distinct slow and fast migrating grain boundaries in acceptor-doped oxides.
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2 Pith papers cite this work. Polarity classification is still indexing.
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cond-mat.mtrl-sci 2years
2026 2verdicts
UNVERDICTED 2representative citing papers
Precession-assisted 4D-STEM combined with Sobel filter and SVD post-processing enables accurate, artefact-reduced mapping of electric fields and charge distributions across random grain boundaries in BaTiO3 and SrTiO3.
citing papers explorer
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Impact of charge transition levels on grain boundary properties in acceptor doped oxide ceramics: A phase-field study
A defect-chemistry-consistent phase-field model shows that charge transition levels govern space-charge layer characteristics and produce distinct slow and fast migrating grain boundaries in acceptor-doped oxides.
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Accurate Nanoscale Mapping of Electric Fields across Random Grain Boundaries in Polycrystalline Oxides Using Precession-Assisted 4D-STEM
Precession-assisted 4D-STEM combined with Sobel filter and SVD post-processing enables accurate, artefact-reduced mapping of electric fields and charge distributions across random grain boundaries in BaTiO3 and SrTiO3.