Computer simulations show that the angular distribution of characteristic x-rays from K-shell ionization by 1-1000 GeV electrons and positrons in oriented silicon crystals evolves non-monotonically with angle and energy, influenced by dechanneling.
Fermi, Phys
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K-shell ionization and characteristic x-ray radiation by high-energy electrons and positrons in oriented silicon crystals
Computer simulations show that the angular distribution of characteristic x-rays from K-shell ionization by 1-1000 GeV electrons and positrons in oriented silicon crystals evolves non-monotonically with angle and energy, influenced by dechanneling.