The high-K anomaly in ScAlN is explained by electromechanical inflation, with effective permittivity given by epsilon_eff = epsilon_33^S + e_33^2 / C_33 under stress-free boundary conditions.
Strain and strain relaxation in semiconductors
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The high K anomaly in ScAlN explained
The high-K anomaly in ScAlN is explained by electromechanical inflation, with effective permittivity given by epsilon_eff = epsilon_33^S + e_33^2 / C_33 under stress-free boundary conditions.