A 30-band k.p model with linearly interpolated parameters predicts band gaps of strained GeSn alloys across the full Brillouin zone and matches selected experiments.
Uniaxially stressed germanium with fundamental direct band gap
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abstract
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
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physics.app-ph 1years
2019 1verdicts
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Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model
A 30-band k.p model with linearly interpolated parameters predicts band gaps of strained GeSn alloys across the full Brillouin zone and matches selected experiments.