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Uniaxially stressed germanium with fundamental direct band gap

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arxiv 1603.03454 v1 pith:BV7M7P3P submitted 2015-12-10 cond-mat.mtrl-sci physics.optics

R. Geiger , T. Zabel , E. Marin , A. Gassenq , J.-M. Hartmann , J. Widiez , J. Escalante , K. Guilloy
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N. Pauc D. Rouchon G. Osvaldo Diaz S. Tardif F. Rieutord I. Duchemin Y.-M. Niquet V. Reboud V. Calvo A. Chelnokov J. Faist H. Sigg
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classification cond-mat.mtrl-sciphysics.optics
keywords bandstraindirectcrossoverfundamentalgermaniumphotoluminescencetemperature-dependent
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.

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Cited by 1 Pith paper

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  1. Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

    physics.app-ph 2019-08 conditional novelty 4.0 of 10

    A 30-band k.p model with linearly interpolated parameters predicts band gaps of strained GeSn alloys across the full Brillouin zone and matches selected experiments.

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