Hydrogenated Sn2Bi (Sn2BiH2) is predicted to be a stable free-standing semiconductor with a strain-tunable band gap of 0.2 to 1.6 eV.
Journal of Applied Physics
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Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation
Hydrogenated Sn2Bi (Sn2BiH2) is predicted to be a stable free-standing semiconductor with a strain-tunable band gap of 0.2 to 1.6 eV.