Demonstration of a ferroelectric junction field-effect transistor memory using tunable van der Waals p-n heterojunctions from p-type SnSe and n-type α-In2Se3 with reported metrics including 1.8 V windows and 100 ns speed.
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A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions
Demonstration of a ferroelectric junction field-effect transistor memory using tunable van der Waals p-n heterojunctions from p-type SnSe and n-type α-In2Se3 with reported metrics including 1.8 V windows and 100 ns speed.