Asymmetric well widths and barrier in a bistable potential allow finite-time bit erasure with heat below kT ln 2, bounded below by the effective free-energy change of the process.
Sekimoto, Progress of Theoretical Physics Supplement 130, 17 (1998), https://academic.oup.com/ptps/article- pdf/doi/10.1143/PTPS.130.17/5213518/130-17.pdf
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Improving the efficiency of finite-time memory erasure with potential barrier shaping
Asymmetric well widths and barrier in a bistable potential allow finite-time bit erasure with heat below kT ln 2, bounded below by the effective free-energy change of the process.