Heavy hole concentrations in substrate-doped α-Sn thin films were extracted from the integrated strength of a 0.45 eV interband absorption peak via the Thomas-Reiche-Kuhn f-sum rule and shown to match intrinsic predictions except where substrate ions diffuse in.
Nussenzveig, and D.\ Y.\ Smith, Phys.\ Rev.\ B 6 , 4502 (1972)
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Hole concentrations in doped gray {\alpha}-Sn on InSb and CdTe measured with infrared ellipsometry
Heavy hole concentrations in substrate-doped α-Sn thin films were extracted from the integrated strength of a 0.45 eV interband absorption peak via the Thomas-Reiche-Kuhn f-sum rule and shown to match intrinsic predictions except where substrate ions diffuse in.