Adding VCMA to MTJ-based CRAM steepens the switching probability curve, lowering simulated NAND logic error rate from 26.33% to 17.25% and reducing logic voltage.
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Modulation of switching dynamics in magnetic tunnel junctions for low-error-rate computational random-access memory
Adding VCMA to MTJ-based CRAM steepens the switching probability curve, lowering simulated NAND logic error rate from 26.33% to 17.25% and reducing logic voltage.