Adding VCMA to MTJ-based CRAM steepens the switching probability curve, lowering simulated NAND logic error rate from 26.33% to 17.25% and reducing logic voltage.
Demonstration of Electron-Mediated Voltage-Controlled Exchange Coupling in Perpendicular Magnetic Tunnel Junctions
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Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging due to the coexistence of slower, voltage-induced ionic effects. Here, we fabricate magnetic tunnel junction (MTJ) devices that enable nanosecond timescale voltage application. Our results reveal rapid exchange coupling modulation on the nanosecond timescale, consistent with an electronic origin. The observed enhancement and saturation at low temperatures further rule out ionic migration, conclusively confirming the electronic nature of the mechanism. These results establish EM-VCEC as a viable mechanism for fast and energy-efficient voltage-driven magnetic switching.
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Modulation of switching dynamics in magnetic tunnel junctions for low-error-rate computational random-access memory
Adding VCMA to MTJ-based CRAM steepens the switching probability curve, lowering simulated NAND logic error rate from 26.33% to 17.25% and reducing logic voltage.