Charge-noise suppression in a GaAs quantum dot diode raises the corrected two-photon interference visibility to 97% and the pure dephasing time to 6.8 ns under quasi-resonant excitation.
Highly indistin- guishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography
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Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression
Charge-noise suppression in a GaAs quantum dot diode raises the corrected two-photon interference visibility to 97% and the pure dephasing time to 6.8 ns under quasi-resonant excitation.