PH3 annealing of dry-etched III-As(P) quantum-well ridges reduces surface recombination velocity to 2e3 cm/s, about 7.5x lower than unpassivated and lower than sulfide plus Al2O3, though InP regrowth reaches 5e2 cm/s.
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Efficient passivation of III-As(P) photonic interfaces
PH3 annealing of dry-etched III-As(P) quantum-well ridges reduces surface recombination velocity to 2e3 cm/s, about 7.5x lower than unpassivated and lower than sulfide plus Al2O3, though InP regrowth reaches 5e2 cm/s.