Nonlinear measurements at 22 GHz show LiNbO3 filters on sapphire substrates achieve higher IIP3 and better thermal stability than on silicon.
Title resolution pending
3 Pith papers cite this work. Polarity classification is still indexing.
3
Pith papers citing it
citation-role summary
background 1
method 1
citation-polarity summary
years
2026 3verdicts
UNVERDICTED 3representative citing papers
Gradient residual stress in transferred thin-film lithium niobate varies with orientation and thickness and can be partially compensated by a periodically poled piezoelectric bilayer.
Silicon doping in AlN produces DX-center self-compensation that caps free electron concentrations independent of dopant level, with less severe effects in AlGaN alloys or c-BN.
citing papers explorer
-
Nonlinear Characterization of Thin-Film LiNbO3 Acoustic Filters
Nonlinear measurements at 22 GHz show LiNbO3 filters on sapphire substrates achieve higher IIP3 and better thermal stability than on silicon.
-
Gradient Residual Stress in Transferred Thin-Film Lithium Niobate and Its Compenstation Using Periodically Poled Piezoelectric Bilayers
Gradient residual stress in transferred thin-film lithium niobate varies with orientation and thickness and can be partially compensated by a periodically poled piezoelectric bilayer.
-
Self-compensation by silicon $DX$ centers in ultrawide-bandgap nitrides
Silicon doping in AlN produces DX-center self-compensation that caps free electron concentrations independent of dopant level, with less severe effects in AlGaN alloys or c-BN.