Numerical modeling of phonon-induced spin relaxation in displaced silicon double quantum dots reveals a new low-field spin-hot spot with relaxation rates four orders of magnitude lower than standard high-field ones when dots are separated by ~60 nm.
Paquelet Wuetz, D
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New Source of Spin-hot spot in displaced silicon double quantum dots
Numerical modeling of phonon-induced spin relaxation in displaced silicon double quantum dots reveals a new low-field spin-hot spot with relaxation rates four orders of magnitude lower than standard high-field ones when dots are separated by ~60 nm.