A dual-material double-gate silicon TFET with an n+ source pocket and homogeneous HfO2 gate dielectric is simulated to achieve ION = 3.16e-4 A/um, IOFF = 1.54e-17 A/um, and subthreshold swing = 6.29 mV/dec.
Int J Appl Eng Res 11:4922- -4929
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Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance
A dual-material double-gate silicon TFET with an n+ source pocket and homogeneous HfO2 gate dielectric is simulated to achieve ION = 3.16e-4 A/um, IOFF = 1.54e-17 A/um, and subthreshold swing = 6.29 mV/dec.