Strong Mpemba effects in the antiferromagnetic Ising model arise from reentrant phase transitions that allow quenches to selectively avoid or excite the staggered slow relaxation mode in the paramagnetic phase.
Title resolution pending
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
years
2026 2verdicts
UNVERDICTED 2representative citing papers
DFT study finds TM doping induces localized moments and flat bands in SnO monolayer while nanoribbon edges show termination-dependent metallic or semiconducting behavior.
citing papers explorer
-
Strong Mpemba Effect Through a Reentrant Phase Transition
Strong Mpemba effects in the antiferromagnetic Ising model arise from reentrant phase transitions that allow quenches to selectively avoid or excite the staggered slow relaxation mode in the paramagnetic phase.
-
Dilute Magnetism and Edge-State Engineering in Monolayer SnO
DFT study finds TM doping induces localized moments and flat bands in SnO monolayer while nanoribbon edges show termination-dependent metallic or semiconducting behavior.