A graphene-ferroelectric device with domain-engineered periodic surface potential induces mini-bands and a band gap in single-layer graphene.
& Roy, A
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Review summarizing innovations in phase-change memory energy efficiency via material scaling and thermal confinement, with discussion of attojoule-scale theoretical limits constrained by parasitics.
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Ferrotronics for the creation of band gaps in Graphene
A graphene-ferroelectric device with domain-engineered periodic surface potential induces mini-bands and a band gap in single-layer graphene.
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Energy and Scaling Limits of Phase-Change Memory
Review summarizing innovations in phase-change memory energy efficiency via material scaling and thermal confinement, with discussion of attojoule-scale theoretical limits constrained by parasitics.