An on-chip SiO2/Si3N4 stencil lithography mask enables shadow evaporation of Al Josephson junctions, demonstrated with transmon qubits achieving average T1 of 75 μs.
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Derivation of loss tangent from zero-field splitting absorption in Cr, Fe, and V impurities in sapphire yields values of 10^{-9} to 10^{-8} at 4.5 GHz, comparable to experimental measurements.
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On-chip stencil lithography for superconducting qubits
An on-chip SiO2/Si3N4 stencil lithography mask enables shadow evaporation of Al Josephson junctions, demonstrated with transmon qubits achieving average T1 of 75 μs.
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Impact of Absorption due to Zero-Field Splitting on Loss in Dielectrics: A Case Study in Sapphire
Derivation of loss tangent from zero-field splitting absorption in Cr, Fe, and V impurities in sapphire yields values of 10^{-9} to 10^{-8} at 4.5 GHz, comparable to experimental measurements.