A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
Mohamed El Kordy and Simion, George and Li, Ruoyu and Mohiyaddin, Fahd A
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
years
2026 2verdicts
UNVERDICTED 2representative citing papers
3D simulations of nanosheet-based silicon spin qubits show millivolt bias variations at plunger and barrier gates can reduce two-qubit gate fidelity below 99%.
citing papers explorer
-
Microscopic modeling of flopping-mode quantum dot spin qubits
A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.