Fully coordinated but distorted phosphorus atoms in InP and GaP quantum dots can create shallow hole traps, a mechanism distinct from dangling-bond surface traps.
Development and challenges of indium phosphide-based quantum-dot light-emitting diodes
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Structural Hole Traps in III-V Quantum Dots
Fully coordinated but distorted phosphorus atoms in InP and GaP quantum dots can create shallow hole traps, a mechanism distinct from dangling-bond surface traps.