Device area selects between distributed tunneling and localized filamentary memristive transport in Hf0.5Zr0.5O2 devices, with a statistical nucleation model giving a crossover area of ~10^3 μm² that correlates with ferroelectric wake-up.
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Reversing ferroelectric polarization in an S-I-FE-I-S Josephson junction switches the critical current with on-off efficiency up to 0.9 according to a WKB tunneling model.
citing papers explorer
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Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
Device area selects between distributed tunneling and localized filamentary memristive transport in Hf0.5Zr0.5O2 devices, with a statistical nucleation model giving a crossover area of ~10^3 μm² that correlates with ferroelectric wake-up.
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Polarization Controlled Supercurrent in Ferroelectric Josephson Junction
Reversing ferroelectric polarization in an S-I-FE-I-S Josephson junction switches the critical current with on-off efficiency up to 0.9 according to a WKB tunneling model.