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arxiv: 2511.08492 · v1 · submitted 2025-11-11 · ❄️ cond-mat.supr-con

Polarization Controlled Supercurrent in Ferroelectric Josephson Junction

Yaozu Tang , Mazhar N. Ali , Gerrit E. W. Bauer , Yaroslav M. Blanter This is my paper

Pith reviewed 2026-05-17 23:15 UTC · model grok-4.3

classification ❄️ cond-mat.supr-con
keywords ferroelectric Josephson junctionsupercurrent switchingpolarization controlWKB tunnelingnon-volatile switchingcryogenic memorysuperconducting electronicsJosephson critical current
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0 comments X

The pith

Reversing ferroelectric polarization switches the critical current in a Josephson junction on or off with up to 90 percent efficiency.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper proposes that inserting a ferroelectric layer between two insulating barriers in a Josephson junction allows the direction of the ferroelectric polarization to control the supercurrent. Breaking inversion symmetry through unequal barrier thicknesses or potentials makes the effective tunneling barrier depend on the polarization state. A WKB tunneling calculation shows that realistic material parameters can produce non-volatile switching with an on-off efficiency reaching 0.9, and the effect can be tuned by adjusting layer thicknesses, barrier heights, and the ferroelectric dielectric constant. The work also supplies a simple linear formula for the critical current when the polarization remains small. These junctions are positioned as electrically programmable switches for superconducting memory and logic at cryogenic temperatures.

Core claim

In S-I-FE-I-S Josephson junctions where inversion symmetry is broken by unequal dielectric barrier thicknesses and/or potentials, ferroelectric polarization reversal converts into a substantial change of the critical current. A WKB tunneling model yields non-volatile switching with on-off efficiency up to 0.9 for physically realistic parameters, achievable by optimizing thicknesses and potential barriers of the insulating layers as well as the thickness and dielectric constant of the ferroelectric layer. A compact linear expression for the critical current is also derived for small polarizations.

What carries the argument

WKB tunneling probability through the composite barrier whose effective height is modulated by ferroelectric polarization direction once inversion symmetry is broken by asymmetric insulating layers.

If this is right

  • Non-volatile switching of the critical current produces electrically programmable superconducting current switches.
  • On-off efficiency up to 0.9 is reachable by optimizing insulating layer thicknesses, barrier potentials, and ferroelectric properties.
  • The junctions function as low-power elements for cryogenic memory and logic applications.
  • A compact linear expression gives the critical current for small polarization values without full numerical tunneling calculations.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • These switches could replace magnetic-field-based control in superconducting circuits, lowering power dissipation in quantum hardware.
  • The same barrier-asymmetry principle might be adapted to control quasiparticle currents or other tunneling phenomena in hybrid devices.
  • Precise thin-film growth techniques would be needed to achieve the required barrier asymmetry in experimental devices.

Load-bearing premise

Inversion symmetry must be broken by unequal dielectric barrier thicknesses and/or potentials so that ferroelectric polarization reversal produces a substantial change in the effective tunneling barrier.

What would settle it

Fabricate an S-I-FE-I-S junction with controlled barrier asymmetry, apply a voltage pulse to reverse the ferroelectric polarization, and measure the critical current before and after; a large reproducible change matching the predicted on-off ratio would confirm the effect.

Figures

Figures reproduced from arXiv: 2511.08492 by Gerrit E. W. Bauer, Mazhar N. Ali, Yaozu Tang, Yaroslav M. Blanter.

Figure 1
Figure 1. Figure 1: FIG. 1 [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: shows J¯ c(P) and η(P) for the four representative geometries of [PITH_FULL_IMAGE:figures/full_fig_p003_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 [PITH_FULL_IMAGE:figures/full_fig_p004_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5 [PITH_FULL_IMAGE:figures/full_fig_p004_5.png] view at source ↗
Figure 6
Figure 6. Figure 6: compares the numerical and analytical results of the critical current density. The linear approximation captures both magnitude and trend for small |P|. The slight offset at P = 0 arises from the small-k|| assump￾tion in the WKB integral and the approximation taken in the second step of Eq. (27). The compact formulas in Eqs. (28) and (29) thus provide rapid estimates of polar￾ization control in ferroelectr… view at source ↗
read the original abstract

Josephson junctions are essential devices in superconducting electronics and quantum computing hardware. Here we predict electrical control of the supercurrent in composite superconductor-insulator-ferroelectric-insulator-superconductor (S-I-FE-I-S) Josephson junctions. Inversion symmetry broken by unequal dielectric barrier thicknesses and/or potentials converts ferroelectric polarization reversal into a substantial change of the critical current. With a WKB tunneling model we obtain non-volatile switching of the critical current with on-off efficiency up to 0.9 for physically realistic parameters. This can be achieved by optimizing the thicknesses and potential barriers of the insulating layers, as well as the thickness and dielectric constant of the ferroelectric layer. We also derive a compact linear expression for the critical current valid for small polarizations. Our results identify ferroelectric Josephson junctions as electrically programmable superconducting current switches for cryogenic memory and logic applications.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 2 minor

Summary. The manuscript proposes electrical control of supercurrent in S-I-FE-I-S Josephson junctions. Inversion symmetry is broken by unequal dielectric barrier thicknesses and/or potentials, allowing ferroelectric polarization reversal to modulate the effective tunneling barrier. A WKB tunneling model is used to predict non-volatile critical-current switching with on-off efficiency up to 0.9 for optimized, physically realistic parameters; a compact linear expression for the critical current at small polarizations is also derived. The results are positioned for cryogenic memory and logic applications.

Significance. If the WKB-based predictions are confirmed, the work identifies a route to non-volatile, electrically programmable superconducting switches. The optimization strategy for barrier parameters and the derivation of the linear small-polarization expression are constructive contributions that could guide device design.

major comments (1)
  1. [WKB tunneling model and efficiency calculation] The headline efficiency of 0.9 is obtained entirely from the WKB transmission probability applied to the asymmetric S-I-FE-I-S potential profile. For the thin dielectric and ferroelectric layers required to reach high contrast, the de Broglie wavelength inside the barrier becomes comparable to the layer thickness, violating the slowly-varying-potential assumption of WKB and neglecting interference and multiple reflections. The manuscript should add an exact transfer-matrix or numerical Schrödinger solution for the same potential to test whether the reported on-off ratio is preserved.
minor comments (2)
  1. [Abstract] The abstract states that thicknesses and barriers are optimized but does not quote the specific values or ranges that achieve the 0.9 figure; these should be stated explicitly.
  2. [Results section] No error bars, sensitivity analysis, or robustness checks against small variations in barrier height or thickness are reported for the efficiency curves.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for their thorough review and valuable suggestions. We appreciate the recognition of the potential significance of our work on ferroelectric Josephson junctions for cryogenic applications. We address the major comment below.

read point-by-point responses

  1. Referee: [WKB tunneling model and efficiency calculation] The headline efficiency of 0.9 is obtained entirely from the WKB transmission probability applied to the asymmetric S-I-FE-I-S potential profile. For the thin dielectric and ferroelectric layers required to reach high contrast, the de Broglie wavelength inside the barrier becomes comparable to the layer thickness, violating the slowly-varying-potential assumption of WKB and neglecting interference and multiple reflections. The manuscript should add an exact transfer-matrix or numerical Schrödinger solution for the same potential to test whether the reported on-off ratio is preserved.

    Authors: We agree with the referee that the WKB approximation has limitations for thin barriers where the de Broglie wavelength is comparable to the layer thickness. This can lead to the neglect of interference and multiple reflections. To address this concern, we will add an exact transfer-matrix calculation for the same potential profiles in the revised manuscript. This will test the robustness of the reported on-off ratio. Our preliminary results using the transfer-matrix method indicate that the high switching efficiency is largely preserved, although some quantitative adjustments may be needed. revision: yes

Circularity Check

0 steps flagged

No circularity: result follows directly from WKB model on asymmetric barrier

full rationale

The paper applies the standard WKB tunneling formula to an S-I-FE-I-S potential whose inversion symmetry is broken by unequal dielectric thicknesses or potentials. The on-off efficiency up to 0.9 and the linear expression for small polarizations are obtained by direct integration and series expansion of that transmission probability; neither quantity is fitted to itself nor imported via self-citation. The derivation chain is therefore self-contained and independent of the numerical target value.

Axiom & Free-Parameter Ledger

2 free parameters · 2 axioms · 0 invented entities

The claim depends on the WKB semiclassical tunneling approximation and the assumption that unequal barriers convert polarization reversal into a large change in critical current; no new particles or forces are introduced.

free parameters (2)
  • insulator thicknesses and barrier heights
    Chosen and optimized to achieve high on-off efficiency for physically realistic values.
  • ferroelectric thickness and dielectric constant
    Selected to maximize the polarization-induced asymmetry in the tunneling probability.
axioms (2)
  • standard math WKB approximation accurately estimates tunneling probability through the composite barrier
    Standard semiclassical method invoked for the current calculation.
  • domain assumption Inversion symmetry breaking by unequal barriers maps polarization reversal to distinct critical currents
    Core premise stated in the abstract that enables the switching effect.

pith-pipeline@v0.9.0 · 5455 in / 1471 out tokens · 38292 ms · 2026-05-17T23:15:07.542366+00:00 · methodology

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