A valley-aware co-simulation and noise-aware optimization of discrete cryogenic circuit settings achieves 99.99% average shuttling fidelity over 10 μm at 20 m/s with tens of μW power.
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
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DFT calculations map Raman signatures, Gruneisen parameters, phonon lifetimes, and temperature-dependent anharmonicity in hexagonal Si and Ge allotropes to inform device applications.
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Valley-Aware Optimal Control of Spin Shuttling Using Cryogenic Integrated Electronics
A valley-aware co-simulation and noise-aware optimization of discrete cryogenic circuit settings achieves 99.99% average shuttling fidelity over 10 μm at 20 m/s with tens of μW power.
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Unraveling the significance of Raman modes, Gruneisen parameters and phonon lifetimes in the hexagonal allotropes of Silicon and Germanium compounds
DFT calculations map Raman signatures, Gruneisen parameters, phonon lifetimes, and temperature-dependent anharmonicity in hexagonal Si and Ge allotropes to inform device applications.