A shadow-evaporated InAs Andreev spin qubit shows a spin relaxation time around 30 microseconds, comparable to etched devices, implying that surface disorder and quasiparticle poisoning are not the dominant relaxation mechanisms.
The epitaxial aluminum was deposited in situ after the growth of the nanowire, covering three facets of the nanowire
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Andreev spin relaxation time in a shadow-evaporated InAs weak link
A shadow-evaporated InAs Andreev spin qubit shows a spin relaxation time around 30 microseconds, comparable to etched devices, implying that surface disorder and quasiparticle poisoning are not the dominant relaxation mechanisms.