Oxygen vacancies stabilize the ferroelectric orthorhombic phase o-III in small Hf0.5Zr0.5O2 nanoparticles via chemical strain and reduced depolarization fields.
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Spike-like AlScN nanoclusters embedded in AlN films enable polarization switching at reduced coercive fields through proximity-induced domain nucleation at the interface.
Neuromorphic computing using compute-in-memory, analog dynamics, and sparse brain-inspired communication offers a route to more energy-efficient AI beyond traditional CMOS scaling limits.
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Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles
Oxygen vacancies stabilize the ferroelectric orthorhombic phase o-III in small Hf0.5Zr0.5O2 nanoparticles via chemical strain and reduced depolarization fields.
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Embedded Ferroelectric Nanoclusters can drive Polarization Reversal in a Non-Ferroelectric Polar Film via the Proximity Effect
Spike-like AlScN nanoclusters embedded in AlN films enable polarization switching at reduced coercive fields through proximity-induced domain nucleation at the interface.
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Neuromorphic Computing for Low-Power Artificial Intelligence
Neuromorphic computing using compute-in-memory, analog dynamics, and sparse brain-inspired communication offers a route to more energy-efficient AI beyond traditional CMOS scaling limits.