Oxygen doping of sputtered ferroelectric Al0.73Sc0.27N reduces leakage current several-fold and reversibly changes the as-grown film polarity from nitrogen- to metal-polar.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.app-ph 1years
2024 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Oxygen doping of sputtered ferroelectric Al0.73Sc0.27N reduces leakage current several-fold and reversibly changes the as-grown film polarity from nitrogen- to metal-polar.