Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

Geoff L. Brennecka; Georg Sch\"onweger; Lorenz Kienle; Lutz Kirste; Maike Gremmel; Margaret Brown; Md Redwanul Islam; Niklas Wolff; Patrik Stra\v{n}\'ak; Simon Fichtner

REVIEW 3 major objections 5 minor 12 references

Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

T0 review · 3 major / 5 minor · reviewed 2026-08-12 · deepseek-v4-flash

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Pith's one-line read Oxygen doping of ferroelectric Al0.73Sc0.27N cuts leakage by up to an order of magnitude and flips as-grown polarity.

desk verdict Useful incremental AlScN study: systematic O-doping lowers leakage and flips as-grown polarity, but the bulk-substitution mechanism and the headline numbers need tougher evidence before I'd trust them quantitatively. read the letter →

arxiv 2411.17360 v1 pith:5LXW65G6 submitted 2024-11-26 physics.app-ph cond-mat.mtrl-sci

Md Redwanul Islam , Niklas Wolff , Georg Schönweger , Tom-Niklas Kreutzer , Margaret Brown , Maike Gremmel , Patrik Straňák , Lutz Kirste

show 3 more authors

Geoff L. Brennecka Simon Fichtner Lorenz Kienle

This is my paper · ORCID

classification physics.app-phcond-mat.mtrl-sci

keywords ferroelectricAlScNoxygendopingleakagecurrentpolaritycontrolreactivesputteringwurtzitenitrideDXcentersthinfilms

verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper claims that deliberately adding oxygen during sputter deposition of ferroelectric Al0.73Sc0.27N thin films reduces leakage currents by almost a factor of four near the coercive field and by roughly an order of magnitude at sub-coercive fields, while leaving the crystal structure largely intact. The oxygen is introduced as a small fraction of the nitrogen gas flow and ends up distributed through the bulk of the film, where it is argued to occupy nitrogen sites and act as deep-level traps that suppress leakage. The doping also flips the as-deposited polarization direction from nitrogen-polar to metal-polar above a threshold oxygen concentration, giving process control over the initial domain state. If these effects hold up, oxygen flow becomes a simple knob for making ferroelectric nitride devices more practical.

What carries the argument

The load-bearing mechanism is substitutional oxygen on nitrogen sites (O_N) in the wurtzite lattice. Oxygen replaces nitrogen first in scandium-coordinated tetrahedra (favored by bond-energy arguments) and, at higher concentrations, in aluminum tetrahedra, forming deep-level DX-center-like traps that capture electrons and reduce leakage; the accompanying local lattice distortion and change in film stress are proposed to drive the N-polar to M-polar inversion above Nmix ≈ 8–10 sccm.

What would settle it

A decisive check would be atom-column-resolved STEM-EELS across grain boundaries in the Nmix = 15 film: if most of the oxygen signal is confined to grain boundaries, surface protrusions, or the interface rather than the bulk lattice, the proposed O_N substitution and DX-center mechanism would not be the operative cause of the leakage drop.

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Extended reading notes

Core claim

The central discovery is that intentional oxygen incorporation, achieved by mixing a N2 with 2% O2 gas source into the reactive sputter gas, is a viable doping route for w-Al0.73Sc0.27N: it cuts switching-related leakage near the coercive field by almost fourfold and steady-state leakage at low fields by about one order of magnitude, and it reverses the as-grown film polarity from N-polar to M-polar as the Nmix flow rises from 8 to 15 sccm. XRD and STEM show the 0002 rocking-curve width increases by only about 20% at the highest doping, with no chemical segregation or Al2O3 interface layer, so the leakage and polarity improvements are not bought at the price of destroying the wurtzite texture. The authors attribute the initial leakage drop to filling of nitrogen vacancies by oxygen and the formation of deep DX-center-like acceptor states, and the later polarity reversal to lattice strain and changes in local bonding that destabilize the N-polar growth mode.

Load-bearing premise

The paper's claims assume that the oxygen counted by SEM-EDS and ToF-SIMS is electrically active oxygen sitting on nitrogen sites inside the wurtzite lattice, and that the Nmix gas-flow setting reliably tracks that bulk doping level.

Editorial extensions

If this is right

O-doped Al0.73Sc0.27N capacitors can be switched with a smaller leakage tail, which directly improves the margin for reading and writing ferroelectric memory cells.
Setting the oxygen flow during sputtering selects the as-deposited polarity, so devices could be built with the preferred initial polarization orientation without a post-growth poling step.
Because bulk crystallinity and c-axis texture are largely preserved, the doping route is compatible with existing sputter-based fabrication flows.
The same gas-phase doping approach may reduce leakage in other wurtzite ferroelectrics such as Al1-xBxN and Al1-xYxN, which the paper argues share the relevant structural features.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

Editorial inference: if the leakage reduction really comes from O_N deep traps, then combining oxygen doping with other intentional dopants could allow independent tuning of leakage and polarity, a combination not explored in this paper.
Editorial inference: because the O quantification is qualitative, a quantitative calibration (for instance Rutherford backscattering) would be needed before the Nmix values could be transferred to another deposition tool.
Editorial inference: the polarity reversal near Nmix = 8–10 sccm is reported for as-deposited films; whether the mixed-polar domain state at the boundary is stable under cycling is not tested, so a natural follow-up is an endurance measurement on Nmix = 8 and 10 films.

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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Desk Editor's Note

read the letter

Bottom line: this is a useful, incremental experimental study, not a breakthrough. The systematic O2-in-N2 flow series is new for ferroelectric AlScN, and the leakage reduction and polarity flip are supported by several independent measurements: J-E tails, quasi-static leakage, P-E loop sharpening, and PFM phase contrast. I would send it to a serious referee, but the revision should tighten the statistics and the mechanistic claims.

What the paper does well: the doping series is clean, the structural characterization is fairly complete, and the authors are honest about the limits of their O quantification. They flag the SEM-EDS background, the 5 nm native oxide, and FIB-related O influx. The finding that the c-axis texture degrades less than 20% at the highest doping is credible and worth knowing. The polarity flip from N- to M-polar via mixed states is the most novel piece, and the PFM data make it believable.

Where I would push back: the stress-test note is partly right but overstates the danger. The paper already acknowledges the surface oxide, the protrusions, and the rough surface at high O flow. It does not, however, prove that the electrical changes come from O substituting on N sites in grain interiors rather than from surfaces, interfaces, or grain boundaries. The protrusions appear at Nmix = 8 sccm, the same window where the polarity starts to flip, so the correlation is suggestive but not causal as presented. STEM-EDS shows "homogeneous" O in the bulk, but EDS cannot distinguish substitutional O from O in grain boundaries or from FIB damage without atomic-scale evidence such as EELS or APT. The authors' own statements about surface oxidation and FIB contamination weaken the bulk-site claim further. That is a real soft spot, but not fatal: the paper mostly couches the mechanism as speculation, and the qualitative result stands even if the site occupancy is unresolved.

The bigger soft spot is statistical reporting. There are no error bars on the leakage or P-E data, and the "fourfold" near-coercive-field reduction appears to be assembled from a 2x improvement on each branch of one representative measurement. The order-of-magnitude sub-coercive reduction in the highest-doped films is more robust because it appears in separate quasi-static data, but I would still want repeated devices and confidence intervals before quoting the numbers in a citation.

Bottom line for you: this is a good experimental contribution for the AlScN device community, worth refereeing, and worth citing with care. The mechanism should be softened in revision, and the headline quantitative claims need statistics. If those are fixed, I would be comfortable with it in a solid applied-physics journal.

Referee Report

3 major / 5 minor

Summary. The manuscript reports a systematic study of oxygen incorporation during reactive sputtering of ferroelectric Al0.73Sc0.27N thin films, achieved by mixing a N2/O2 source into the nitrogen gas flow. The claims are that O-doped films show an almost fourfold leakage-current reduction near the coercive field, roughly an order-of-magnitude reduction of steady-state leakage at sub-coercive fields, a polarity transition from nitrogen-polar to metal-polar as-deposited films with increasing O content, and only minor structural degradation (a <20% increase in XRD rocking-curve width). These claims are supported by P-E and J-E hysteresis measurements, quasi-static leakage measurements, unipolar J-V polarity tests, PFM phase/amplitude mapping, HRXRD, SEM/STEM imaging, and STEM-EDS elemental mapping. The authors attribute the leakage improvement to O filling N vacancies and forming deep-level DX centers, and attribute the polarity flip to O-driven destabilization of the N-polar growth mode.

Significance. If the claims hold, the paper provides a practically relevant and seemingly simple gas-phase doping route to reduce leakage and engineer the as-deposited polarity of ferroelectric AlScN, which is a key obstacle for memory and MEMS applications. The strengths of the paper include direct electrical measurements of leakage and switching behavior, independent PFM confirmation of the polarity transition, multi-technique structural characterization, and an unusually candid discussion of the quantitative limitations of the O-content measurements. The central weakness is that the bulk-substitutional mechanism is not uniquely established: the electrical changes occur at the same doping range in which pronounced surface protrusions and a native oxide appear, and the O quantification is explicitly qualitative. The significance is therefore conditional on separating bulk from surface/interface contributions.

major comments (3)

[Results and discussion: Determination of O-content; Effects of O-doping on the surface and bulk microstructure] The manuscript attributes the leakage reduction and polarity flip to oxygen incorporated on nitrogen sites in the bulk wurtzite lattice, but the data do not exclude an alternative explanation in which the electrical changes are caused or strongly modified by the O-rich surface protrusions, the ~5 nm native oxide, or interfacial layers. The surface protrusions first appear at Nmix = 8 sccm and cover the surface by Nmix = 12 sccm (Figure 3e-h), which is exactly the doping range where the mixed-polarity state and the second-stage leakage drop are observed (Figures 5 and 6). The authors themselves note that SEM-EDS carries a ~1.2 at% O background from buried SiO2, that ToF-SIMS is only relative, and that FIB and surface oxidation can inflate the bulk O signal. Without atomic-scale evidence such as EELS or atom-probe tomography showing O on nitrogen sites in grain interiors, the central claim that gas-phase O doping of the bulk reduces leakage and sets polarity is not uniquely demonstrated. I recommend adding a control experiment (e.g., a film with the surface protrusions removed or an interface-engineered stack) or direct site-specific chemical analysis to separate bulk from surface/interface effects.
[Figure 5 and accompanying text] The headline claim of 'almost a fourfold reduction of the leakage current near the coercive field' is not supported by a single quantitative measurement: the text states a 'four-fold drop (2x at the positive side and 2x at the negative side)', which is a product of two separate branchwise factors rather than a directly observed fourfold ratio in the same device or polarity state. In addition, Figure 5c-d reports leakage current densities without error bars, device-to-device statistics, or a statement of how many capacitors were measured per composition; the experimental section mentions 100 averages but not the number of devices. The authors should report the extracted leakage values for each polarity branch, with uncertainties and sample counts, and revise the abstract/conclusion wording if the fourfold factor is a combined metric.
[Results and discussion: As-deposited polarization reversal via O-doping] The polarity assignment in Figure 6 is based on unipolar J-V responses from two pristine pads per composition, and PFM phase maps are shown for only three of the eight compositions (Nmix = 0, 8, 15 sccm). Given the substantial surface roughness and protrusions at Nmix ≥ 12 sccm, which the authors acknowledge can affect PFM contrast and electrode contact, the conclusion that the films are 'entirely M-polar' at Nmix = 12 and 15 sccm would be strengthened by additional pads per sample, a statistical measure of the switching-peak asymmetry, and PFM data for the 12 sccm sample. As written, the evidence supports a qualitative polarity trend but not the quantitative strength of the claim.

minor comments (5)

[Abstract and Introduction] The phrase 'changing from nitrogen- to metal-polar orientation' is clear, but the abstract does not mention the mixed-polarity intermediate region reported in the main text; consider adding a qualifier such as 'via intermediate mixed-polar states' for consistency.
[Figure 2] The error bars in Figure 2b for the in-plane a lattice parameter are large and asymmetric, but this is not explained in the caption; the text mentions the larger error only in passing. Please add the uncertainty source to the caption.
[Results and discussion: Effects of O-doping on the surface and bulk microstructure] The statement 'It can be assumed that O atoms are likely to replace an N atom (ON) in a Sc-coordinated tetrahedra first' would be better phrased as a hypothesis, because the authors later note that calculations for Sc-tetrahedra distortions are missing; the current wording overstates the structural evidence.
[Experimental section] The sentence 'The use of this separate sample set on sapphire was necessary to conduct as the sample has to be transparent for transmission measurements' contains a grammatical error ('to conduct as'); it should read 'was necessary because the sample has to be transparent'.
[Figure 6] The PFM sub-figures are labeled (i), (ii), (iii) within each panel but the caption refers to 'sub-figures i-l', which is inconsistent with the figure layout showing (a-h) electrical data and (i-k) PFM data; please align the labels.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: leakage and polarity results are direct measurements, and the interpretive mechanisms are not load-bearing.

full rationale

The paper's headline claims — a roughly fourfold reduction in leakage current near the coercive field, about an order-of-magnitude reduction in steady-state sub-coercive leakage, and a transition from N-polar to M-polar as-deposited films with increasing oxygen flow — are all direct measurements of J-E, P-E, unipolar J-V, and PFM phase on a series of films grown with different Nmix settings. No parameter is fitted to the electrical data to produce these results, and no equation in the paper defines the output in terms of the input. The oxygen doping level is an independently set process variable (Nmix = 0–15 sccm), corroborated by monotonic SEM-EDS and ToF-SIMS trends; the authors explicitly label the absolute O quantification as qualitative, but that affects interpretation rather than making the result circular. The DFT/DX-center discussion (refs 31–32) is used only as a post-hoc speculative mechanism for the observed leakage improvement, and it is not needed to establish the measured leakage reduction or the polarity flip. Self-citations (e.g., refs 7, 16, 17, 20, 22, 25) support background statements about AlScN growth, microstructure, and typical leakage behavior, but the present conclusions do not reduce to those citations; the electrical and PFM data are independently reported here. The competing surface-oxide/protrusion explanation raised in the skeptical summary is a causal-interpretation risk and a validity concern, but it does not constitute a circular derivation, because the correlation between Nmix and electrical response is empirical rather than constructed. No circular step can be exhibited from the paper's own equations or definitions.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

This ledger is sparse because the paper is experimental: it introduces no fitted model parameters and no new entities. The burdens are interpretive assumptions about where oxygen sits, what the electrical polarity fingerprints mean, how to translate O intensities into concentrations, and whether sapphire-based optical data transfer to device wafers.

assumptions (4)

domain assumption Oxygen atoms substitute on nitrogen sites (ON) in the wurtzite lattice and act as deep-level traps.
Leakage reduction is interpreted via N-vacancy filling and DX-center behavior cited from refs 31 and 32; the films are not directly probed for trap energies.
domain assumption As-grown polarity can be read reliably from unipolar J-V switching peaks and PFM phase contrast.
The N-polar and M-polar labels rely on established convention from prior AlScN work; no independent polarization standard is calibrated on these stacks.
domain assumption SEM-EDS and ToF-SIMS O intensities are monotonic proxies for bulk O content.
The paper states O quantification is qualitative, with a 1.2 at% background from buried SiO2 and possible FIB surface oxidation; doping-level claims use Nmix as the nominal dose.
domain assumption Bandgap trends from sapphire-grown epitaxial samples transfer to Pt/Si device samples.
UV-Vis required transparent substrates, so a separate sapphire sample set was used; only similar HRXRD trends are shown, not identical films.

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Cite this review

Pith. "Pith review of Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films." pith.science (2026). https://pith.science/paper/5LXW65G6

@misc{pith2026241117360,
  author       = {Pith},
  title        = {Pith review of: Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/5LXW65G6}},
  note         = {Machine review of arXiv:2411.17360}
}

read the original abstract

This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude sub-coercive fields. Microstructure analysis using X-ray diffraction 1and scanning transmission electron microscopy (STEM) revealed no significant structural degradation of the bulk Al0.73Sc0.27N. In case of the maximum O-doped film, the c-axis out-of-plane texture increased by only 20% from 1.8{\deg} and chemical mapping revealed a uniform distribution of oxygen incorporation into the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen- to metal-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film quality, thereby making ferroelectric nitrides more suitable for microelectronic applications.

Figures

Figures reproduced from arXiv: 2411.17360 by the authors.

**Figure 1.** O-content in the bulk w-Al0.73Sc0.27N quantified from SEM-EDS (left y-axis) and normalized O(x)/(O(x=15) + Al(x)) intensity from negative ion ToF-SIMS measurement (right y-axis). Here, x is the Nmix value of the corresponding specimen and Al(x) is roughly constant for all samples (see Table S1 in the supporting information). The R2 values for linear fitting are listed at the top left of the figure. Systematic O-dop… view at source ↗

**Figure 2.** (a) XRD (0002)-rc (ω-FWHM), (b) In and Out of plane c-lattice parameters and (c) Estimated direct (circle) and indirect (square) bandgaps of the undoped (Nmix = 0) and O-doped samples (Nmix = 2, 4, 6, 8, 10, 12, 15 sccm). The effect of O-doping on the c-axis orientation is determined by the 0002 reflection ωfull width at half maximum (FWHM) of high resolution X-ray rocking curve measurements as presented in Figure … view at source ↗

**Figure 3.** SEM surface topography (2x2 µm2 ) of the samples without (a) and with (b-h) O-doping. The red circles in (h) indicate the the presence of surface defects, e.g., oxide protrusions. The SEM surface microstructure observation of the O-doped series including the reference sample are depicted in [PITH_FULL_IMAGE:figures/full_fig_p009_3.png] view at source ↗

Figures from the paper (3 more)

**Figure 4.** Figure 4: (a) STEM-ABF cross-section image of the O-doped Al0.73Sc0.27N film with Nmix = 15 sccm. Larger and smaller surface protrusions (marked by the red circle) disseminate into the depth of the columnar film. The inset shows the SAED pattern of the bulk film - highly c-axis …

**Figure 5.** Figure 5: Ferroelectric response of the Al0.74Sc0.26N without (blue, Nmix = 0 sccm) and with Odoping (Nmix = 2, 4, 6, 8, 10, 12, 15 sccm). (a) P-E, (b) current density vs. electric field (J-E) characteristics, (c) Leakage current density at 5.2 MV cm-1 (near Ec) at 5 kHz, (d) S…

**Figure 6.** Figure 6: As-deposited polarity test in 50x50 µm2 pads (a) Reference w-Al0.73Sc0.27N (Nmix = 0 sccm), (b) Nmix = 2 sccm, (c) Nmix = 4 sccm, (d) Nmix = 6 sccm, (e) Nmix = 8 sccm, (f) Nmix = 10 sccm, (g) Nmix = 12 sccm, and (h) Nmix = 15 sccm. PFM measuremtns of w-Al0.73Sc0.27N fo…

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Works this paper leans on

12 extracted references · 12 canonical work pages

[3]

Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors.ACS Ap- plied Materials & Interfaces2023, 15, 18022–18031

(8) Wang, P.; Wang, D.; Mondal, S.; Hu, M.; Wu, Y.; Ma, T.; Mi, Z. Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors.ACS Ap- plied Materials & Interfaces2023, 15, 18022–18031. (9) Drury, D.; Yazawa, K.; Zakutayev, A.; Hanrahan, B.; Brennecka, G. High-temperature ferroelectric behavior of Al0. 7Sc0. 3N.Micromachin...

work page 2022
[10]

V.; Grotjohn, T.; Hardy, A.; Muehle, M.; Wilson, R

(38) Guzman, E.; Kargar, F.; Angeles, F.; Meidanshahi, R. V.; Grotjohn, T.; Hardy, A.; Muehle, M.; Wilson, R. B.; Goodnick, S. M.; Balandin, A. A. Effects of boron doping on the bulk and surface acoustic phonons in single-crystal diamond.ACS Applied Materials & Interfaces 2022, 14, 42223–42231. 26 (39) Anggraini, S. A.; Uehara, M.; Hirata, K.; Yamada, H.;...

work page 2022
[93]

(45) Chen, Z.; Jaramillo, T. F. The Use of UV-Visible Spectroscopy to Measure the Band Gap of a Semiconductor.2017, (46) Vachhani, P. S.; Bhatnagar, A. K. Oxygen pressure-dependent band gap in Cu-doped and -undoped ZnO films.Physica Scripta 2013,

work page 2017
[95]

R.; Fichtner, S

(25) Schönweger, G.; Islam, M. R.; Fichtner, S. Structural and ferroelectric properties of Al1- xScxN. 2023, (26) Geng, W.; Chen, X.; Pan, L.; Qiao, X.; He, J.; Mu, J.; Hou, X.; Chou, X. Improved crystallization, domain, and ferroelectricity by controlling lead/oxygen vacancies in Mn-doped PZT thin films.Materials Characterization 2021, 176, 111131. (27) ...

work page 2023
[104]

Sample preparation for atomic-resolution STEM at low voltages by FIB.Ultramicroscopy 2012, 114, 62–71

(41) Schaffer, M.; Schaffer, B.; Ramasse, Q. Sample preparation for atomic-resolution STEM at low voltages by FIB.Ultramicroscopy 2012, 114, 62–71. (42) Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.; McCluskey, M.; Johnson, N. Defects and defect reactions in semiconductor nitrides. Acta Physica Polonica A 1999, 96, 613–627. (43) Sebastian, M. T.; Silva...

work page 2012
[116]

R.; Gremmel, M.; Petraru, A.; Kienle, L.; Kohlst- edt, H.; Fichtner, S

24 (22) Schönweger, G.; Wolff, N.; Islam, M. R.; Gremmel, M.; Petraru, A.; Kienle, L.; Kohlst- edt, H.; Fichtner, S. In-grain ferroelectric switching in sub-5 nm thin Al0. 74Sc0. 26N films at 1 V.Advanced Science2023, 10, 2302296. (23) Akiyama, M.; Kamohara, T.; Kano, K.; Teshigahara, A.; Takeuchi, Y.; Kawahara, N. Enhancement of piezoelectric response in...

work page 2009
[118]

(4) Kim, K.-H.; Oh, S.; Fiagbenu, M. M. A.; Zheng, J.; Musavigharavi, P.; Kumar, P.; Trainor, N.; Aljarb, A.; Wan, Y.; Kim, H. M.; others Scalable CMOS back-end-of-line- compatible AlScN/two-dimensional channel ferroelectric field-effect transistors.Nature nanotechnology 2023, 18, 1044–1050. (5) Mikolajick, T.; Slesazeck, S.; Mulaosmanovic, H.; Park, M.; ...

work page 2023
[119]

(15) Wang, D.; Mondal, S.; Liu, J.; Hu, M.; Wang, P.; Yang, S.; Wang, D.; Xiao, Y.; Wu, Y.; Ma, T.; others Ferroelectric YAlN grown by molecular beam epitaxy.Applied Physics Letters 2023,

work page 2023

Show all 12 references

[123]

R.; Schoönweger, G.; Wolff, N.; Petraru, A.; Kohlstedt, H.; Fichtner, S.; Kienle, L

(16) Islam, M. R.; Schoönweger, G.; Wolff, N.; Petraru, A.; Kohlstedt, H.; Fichtner, S.; Kienle, L. A Comparative Study of Pt/Al0. 72Sc0. 28N/Pt-Based Thin-Film Metal- Ferroelectric-Metal Capacitors on GaN and Si Substrates.ACS Applied Materials & Interfaces 2023, 15, 41606–41...

2023
[125]

(3) Wang, P.; Wang, D.; Vu, N

(2) Leone, S.; Ligl, J.; Manz, C.; Kirste, L.; Fuchs, T.; Menner, H.; Prescher, M.; Wiegert, J.; Žukauskait˙ e, A.; Quay, R.; others Metal-organic chemical vapor deposi- tion of aluminum scandium nitride.physica status solidi (RRL)–Rapid Research Letters 2020, 14, 1900535. (3)...

2020
[135]

Y.; Kakushima, K

(28) Chen, S.-M.; Nishida, H.; Tsai, S.-L.; Hoshii, T.; Tsutsui, K.; Wakabayashi, H.; Chang, E. Y.; Kakushima, K. Oxygen-atom Incorporated Ferroelectric AIScN Capaci- tors for Multi-level Operation.IEEE Electron Device Letters2024, (29) Zhu, X.; Liu, K.; Lu, Z.; Xu, Y.; Qi, S....

2020
[3204]

U.; Brennecka, G

(31) Lee, C.-W.; Din, N. U.; Brennecka, G. L.; Gorai, P. Defects and oxygen impurities in ferroelectric wurtzite Al1-xScxN alloys.Applied Physics Letters2024, 125, 022901. (32) Gordon, L.; Lyons, J.; Janotti, A.; Van de Walle, C. Hybrid functional calculations of DX centers in...

2008

Pith tools

Reviewed August 12, 2026 · model on record in the stance chip above.

[1] [3]

Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors.ACS Ap- plied Materials & Interfaces2023, 15, 18022–18031

(8) Wang, P.; Wang, D.; Mondal, S.; Hu, M.; Wu, Y.; Ma, T.; Mi, Z. Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors.ACS Ap- plied Materials & Interfaces2023, 15, 18022–18031. (9) Drury, D.; Yazawa, K.; Zakutayev, A.; Hanrahan, B.; Brennecka, G. High-temperature ferroelectric behavior of Al0. 7Sc0. 3N.Micromachin...

work page 2022

[2] [10]

V.; Grotjohn, T.; Hardy, A.; Muehle, M.; Wilson, R

(38) Guzman, E.; Kargar, F.; Angeles, F.; Meidanshahi, R. V.; Grotjohn, T.; Hardy, A.; Muehle, M.; Wilson, R. B.; Goodnick, S. M.; Balandin, A. A. Effects of boron doping on the bulk and surface acoustic phonons in single-crystal diamond.ACS Applied Materials & Interfaces 2022, 14, 42223–42231. 26 (39) Anggraini, S. A.; Uehara, M.; Hirata, K.; Yamada, H.;...

work page 2022

[3] [93]

(45) Chen, Z.; Jaramillo, T. F. The Use of UV-Visible Spectroscopy to Measure the Band Gap of a Semiconductor.2017, (46) Vachhani, P. S.; Bhatnagar, A. K. Oxygen pressure-dependent band gap in Cu-doped and -undoped ZnO films.Physica Scripta 2013,

work page 2017

[4] [95]

R.; Fichtner, S

(25) Schönweger, G.; Islam, M. R.; Fichtner, S. Structural and ferroelectric properties of Al1- xScxN. 2023, (26) Geng, W.; Chen, X.; Pan, L.; Qiao, X.; He, J.; Mu, J.; Hou, X.; Chou, X. Improved crystallization, domain, and ferroelectricity by controlling lead/oxygen vacancies in Mn-doped PZT thin films.Materials Characterization 2021, 176, 111131. (27) ...

work page 2023

[5] [104]

Sample preparation for atomic-resolution STEM at low voltages by FIB.Ultramicroscopy 2012, 114, 62–71

(41) Schaffer, M.; Schaffer, B.; Ramasse, Q. Sample preparation for atomic-resolution STEM at low voltages by FIB.Ultramicroscopy 2012, 114, 62–71. (42) Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.; McCluskey, M.; Johnson, N. Defects and defect reactions in semiconductor nitrides. Acta Physica Polonica A 1999, 96, 613–627. (43) Sebastian, M. T.; Silva...

work page 2012

[6] [116]

R.; Gremmel, M.; Petraru, A.; Kienle, L.; Kohlst- edt, H.; Fichtner, S

24 (22) Schönweger, G.; Wolff, N.; Islam, M. R.; Gremmel, M.; Petraru, A.; Kienle, L.; Kohlst- edt, H.; Fichtner, S. In-grain ferroelectric switching in sub-5 nm thin Al0. 74Sc0. 26N films at 1 V.Advanced Science2023, 10, 2302296. (23) Akiyama, M.; Kamohara, T.; Kano, K.; Teshigahara, A.; Takeuchi, Y.; Kawahara, N. Enhancement of piezoelectric response in...

work page 2009

[7] [118]

(4) Kim, K.-H.; Oh, S.; Fiagbenu, M. M. A.; Zheng, J.; Musavigharavi, P.; Kumar, P.; Trainor, N.; Aljarb, A.; Wan, Y.; Kim, H. M.; others Scalable CMOS back-end-of-line- compatible AlScN/two-dimensional channel ferroelectric field-effect transistors.Nature nanotechnology 2023, 18, 1044–1050. (5) Mikolajick, T.; Slesazeck, S.; Mulaosmanovic, H.; Park, M.; ...

work page 2023

[8] [119]

(15) Wang, D.; Mondal, S.; Liu, J.; Hu, M.; Wang, P.; Yang, S.; Wang, D.; Xiao, Y.; Wu, Y.; Ma, T.; others Ferroelectric YAlN grown by molecular beam epitaxy.Applied Physics Letters 2023,

work page 2023