Oxygen doping of sputtered ferroelectric Al0.73Sc0.27N reduces leakage current several-fold and reversibly changes the as-grown film polarity from nitrogen- to metal-polar.
Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors.ACS Ap- plied Materials & Interfaces2023, 15, 18022–18031
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Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Oxygen doping of sputtered ferroelectric Al0.73Sc0.27N reduces leakage current several-fold and reversibly changes the as-grown film polarity from nitrogen- to metal-polar.