An analytic PDE model for VUV SiPMs is fitted to 350-830 nm measurements at 163 K and extrapolated to predict performance in liquid xenon and argon.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.ins-det 1years
2025 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Demonstrating a broadband Photon Detection Efficiency model on VUV sensitive Silicon Photomultipliers
An analytic PDE model for VUV SiPMs is fitted to 350-830 nm measurements at 163 K and extrapolated to predict performance in liquid xenon and argon.