Room-temperature single-photon emission via biexciton-exciton cascade is shown in sidewall-treated InGaN quantum dots below 35 nm diameter, where Auger recombination and reduced surface states suppress multi-photon events.
Femto-Second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural Radial Potential Well and its Dynamic Modulation
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Size-Limited Room Temperature Single-Photon Emission from Sidewall-Treated Fractional Dimension InGaN Quantum Dots: Determined by Density-of-States-Corrected Ultrafast Carrier Dynamics and Improved Signal-to-Noise Ratio
Room-temperature single-photon emission via biexciton-exciton cascade is shown in sidewall-treated InGaN quantum dots below 35 nm diameter, where Auger recombination and reduced surface states suppress multi-photon events.