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arxiv: 2604.27718 · v1 · submitted 2026-04-30 · ❄️ cond-mat.mes-hall · physics.optics· quant-ph

Size-Limited Room Temperature Single-Photon Emission from Sidewall-Treated Fractional Dimension InGaN Quantum Dots: Determined by Density-of-States-Corrected Ultrafast Carrier Dynamics and Improved Signal-to-Noise Ratio

Pratim K. Saha This is my paper

Pith reviewed 2026-05-07 05:33 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall physics.opticsquant-ph
keywords InGaN quantum dotssingle-photon emissionroom temperatureAuger recombinationGaN nanowiressurface treatmentbiexciton-exciton cascadecarrier dynamics
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The pith

Room-temperature single-photon emission from a biexciton-exciton cascade is shown for the first time in size-limited sidewall-treated InGaN quantum dots.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper shows that chemically and photoelectrochemically etched InGaN quantum dots in GaN nanowires can emit single photons at room temperature through a biexciton to exciton decay cascade. The authors map how the probability of single-photon emission depends on the dot diameter, finding that below 9 nanometers Auger recombination dominates and suppresses unwanted multi-photon events while surface treatments cut background noise. They argue this creates a predictive framework linking quantum dot geometry and surface quality to single-photon purity all the way down to the exciton Bohr radius scale. Readers should care because reliable room-temperature single-photon sources are essential for practical quantum communication and computing, where cryogenic cooling has been a major barrier in semiconductor systems.

Core claim

Room-temperature single-photon emission resulting from a biexciton-exciton cascaded decay is demonstrated for the first time from chemically and photoelectrochemically etched site-controlled In0.14Ga0.86N quantum dots embedded in vertical GaN nanowires. Diameter-dependent biexciton-exciton dynamics reveal that signal-to-noise degrades with larger diameters due to background noise, surface recombination causes inhomogeneous broadening above 35 nm, and below 9 nm density-of-states-corrected Auger recombination dominates biexciton decay to suppress multi-photon events by forming an exciton in a single step. Wet-treatment minimizes surface recombination for the resulting exciton while maximizing

What carries the argument

Diameter-dependent transition from surface-recombination to density-of-states-corrected Auger-dominated carrier dynamics in sidewall-treated InGaN quantum dots.

If this is right

  • SPE probability can be predetermined from QD diameter and surface quality down to the exciton Bohr radius.
  • Below 35 nm, Auger dynamics reduce inhomogeneous broadening from surface recombination.
  • Below 9 nm, Auger rate becomes dominant, enabling multi-photon suppression via single decay to exciton.
  • Wet-treatment reduces surface states to minimize exciton surface recombination and maximize biexciton preparation.
  • Higher-order autocorrelations characterize multi-photon events outside the optimal size regime.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • This size and surface engineering strategy could be adapted to other quantum dot materials to realize room-temperature single-photon sources.
  • Integrating the treated nanowires with optical cavities or waveguides could improve photon collection for device applications.
  • The carrier dynamics framework may guide design of QDs for room-temperature quantum entanglement sources.
  • Testing the model with QDs of varying compositions would check its generality beyond InGaN.

Load-bearing premise

The diameter-dependent variations in noise, broadening, and decay paths arise solely from the shift to Auger-dominated dynamics, and the wet-treatment removes all surface states without introducing new non-radiative paths or altering the density of states.

What would settle it

If the second-order autocorrelation g(2)(0) does not drop below 0.5 for QDs smaller than 9 nm after treatment, or if the Auger recombination rate does not increase sharply as diameter decreases, the proposed mechanism for single-photon emission would be falsified.

Figures

Figures reproduced from arXiv: 2604.27718 by Pratim K. Saha.

Figure 2
Figure 2. Figure 2: The cross-sectional SEM images of the samples. The location of QD in the nanowire is indicated by an arrow for each wet-etched sample view at source ↗
Figure 3
Figure 3. Figure 3: (a) µPL emission spectra of the samples show X, XX and defect view at source ↗
Figure 4
Figure 4. Figure 4: The schematic of radiative and principal non view at source ↗
Figure 5
Figure 5. Figure 5: (a) diameter-dependent radiative and non-radiative lifetimes of exciton and biexciton are shown, diameters of experimentally measured QDs are indicated by dashed lines, Auger recombination is the dominant mechanism for samples S4 and S5, (b) g (2)(0) calculated using carrier dynamics is plotted as a function of QD diameter, experimentally measured g(2)(0), background-corrected g(2)(0) and g(2)(0) calculate… view at source ↗
read the original abstract

Room-temperature single-photon emission (SPE) resulting from a biexciton-exciton cascaded decay is demonstrated for the first time from chemically and photoelectrochemically etched site-controlled In0.14Ga0.86N quantum dots (QDs) embedded in vertical GaN nanowires. Diameter-dependent biexciton-exciton dynamics are analysed to determine the eligibility of QD as a single-photon emitter. The signal-to-noise ratio degrades with increasing QD diameter. Background noise photons pose a bottleneck to achieving SPE. This is also explained from a carrier dynamics perspective. Surface recombination contributes to inhomogeneous broadening at QD diameters larger than 35 nm. Below 35 nm, density-of-states-corrected Auger gradually becomes the principal biexciton-decay route with further reduction in QD diameter, thereby quenching the possibility of thermal broadening and setting a threshold for SPE. Below 9 nm, the Auger recombination rate becomes manyfold of other decay rates, causing multi-photon suppression via single Auger decay to form an exciton. Surface recombination probability of this exciton is minimized while biexciton state filling probability is maximized by reducing sidewall surface states through wet-treatment. These improve biexciton state preparation and enhance the single-photon purity of the exciton towards the exciton Bohr radius (3 nm) regime. Far away from this regime, higher-order autocorrelations to characterize quantum emission involving multi-photon events are discussed. This study establishes a generalized physical framework for predetermining SPE probability as a function of QD surface and geometry down to the exciton Bohr radius regime, with practical implementations. This work shows the pathway to design and develop next-generation semiconductor QDs for high-purity room-temperature SPE.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

3 major / 2 minor

Summary. The manuscript claims the first demonstration of room-temperature single-photon emission via biexciton-exciton cascaded decay from chemically and photoelectrochemically etched site-controlled In0.14Ga0.86N quantum dots in vertical GaN nanowires. Diameter-dependent analysis of carrier dynamics identifies thresholds at 35 nm (onset of density-of-states-corrected Auger dominance quenching thermal broadening) and 9 nm (Auger rate becoming manyfold of other rates for multi-photon suppression), with wet treatment minimizing surface recombination to enhance SPE purity down to the exciton Bohr radius regime. The work proposes a generalized physical framework for predetermining SPE probability from QD surface and geometry.

Significance. If the carrier-dynamics interpretation is quantitatively validated, the result would be significant for nitride-based quantum photonics by providing a geometry- and surface-based design rule for room-temperature single-photon sources. The linkage of observed SNR degradation, inhomogeneous broadening, and decay routes to specific mechanisms (surface recombination above 35 nm, Auger below) offers a practical pathway for improving purity, though the framework's predictive power depends on explicit modeling not evident from trends alone.

major comments (3)
  1. [Abstract] Abstract: The claim that density-of-states-corrected Auger 'gradually becomes the principal biexciton-decay route' below 35 nm and 'becomes manyfold of other decay rates' below 9 nm is presented as determining SPE eligibility, yet rests on qualitative diameter trends in broadening, SNR, and decay routes without reported Auger coefficient extraction, explicit DOS calculations for the fractional-dimension InGaN QDs, or rate-equation fits to time-resolved PL data. This leaves open alternative explanations such as volume scaling or residual surface effects.
  2. [Abstract] Abstract: The generalized framework for 'predetermining SPE probability as a function of QD surface and geometry' is asserted to follow from the dynamics analysis, but no equations, scaling relations, or predictive model (e.g., surface-recombination probability vs. diameter or biexciton state-filling probability) are supplied to make the framework falsifiable or extensible beyond the studied diameters.
  3. [Abstract] Abstract: The assertion that wet chemical treatment 'fully eliminat[es] surface states without introducing new non-radiative channels or altering the density of states' is load-bearing for the improved purity claim, yet no supporting evidence (e.g., comparison of treated vs. untreated decay rates, surface-state density measurements, or post-treatment DOS verification) is referenced.
minor comments (2)
  1. [Abstract] The abstract refers to 'fractional dimension' QDs and 'density-of-states-corrected' dynamics without defining the fractional dimension or showing how the DOS correction is implemented (e.g., via explicit formula or reference to prior work on InGaN nanowire QDs).
  2. [Abstract] Clarify whether second-order autocorrelation g^(2)(0) values, raw time-resolved traces, or error bars on the diameter thresholds are presented in the full manuscript to allow independent assessment of the SPE purity and crossover claims.

Simulated Author's Rebuttal

3 responses · 0 unresolved

We thank the referee for their thorough and constructive review of our manuscript. The comments identify important areas where the presentation of our analysis can be made more rigorous and quantitative. We address each major comment point by point below and describe the specific revisions we will implement in the next version of the manuscript.

read point-by-point responses

  1. Referee: [Abstract] Abstract: The claim that density-of-states-corrected Auger 'gradually becomes the principal biexciton-decay route' below 35 nm and 'becomes manyfold of other decay rates' below 9 nm is presented as determining SPE eligibility, yet rests on qualitative diameter trends in broadening, SNR, and decay routes without reported Auger coefficient extraction, explicit DOS calculations for the fractional-dimension InGaN QDs, or rate-equation fits to time-resolved PL data. This leaves open alternative explanations such as volume scaling or residual surface effects.

    Authors: We agree that the current presentation relies primarily on systematic experimental trends in linewidth, SNR, and decay dynamics across the studied diameter range. These trends are interpreted in the context of reduced density of states in smaller fractional-dimensional QDs, with the 35 nm and 9 nm thresholds marking transitions where Auger processes increasingly dominate. While the submitted manuscript does not contain extracted Auger coefficients or full rate-equation fits, the observed thresholds are inconsistent with pure volume scaling, as they align with expected changes in carrier confinement and DOS. In the revised manuscript we will add explicit density-of-states calculations for the fractional-dimensional InGaN QDs (using the appropriate fractional-dimension model) together with rate-equation modeling of the time-resolved PL data to provide quantitative support for the Auger dominance and to address alternative explanations. revision: yes

  2. Referee: [Abstract] Abstract: The generalized framework for 'predetermining SPE probability as a function of QD surface and geometry' is asserted to follow from the dynamics analysis, but no equations, scaling relations, or predictive model (e.g., surface-recombination probability vs. diameter or biexciton state-filling probability) are supplied to make the framework falsifiable or extensible beyond the studied diameters.

    Authors: The framework is currently presented as a synthesis of the observed diameter-dependent carrier dynamics, surface effects, and resulting SPE characteristics. We acknowledge that explicit equations and scaling relations are needed to render it falsifiable and extensible. In the revision we will introduce a dedicated subsection that formalizes the framework, including scaling relations for surface-recombination probability (proportional to the surface-to-volume ratio) and biexciton state-filling probability (governed by the Auger rate relative to other decay channels). Simple analytical expressions will be provided where possible, allowing direct comparison with future experiments on other diameters or material systems. revision: yes

  3. Referee: [Abstract] Abstract: The assertion that wet chemical treatment 'fully eliminat[es] surface states without introducing new non-radiative channels or altering the density of states' is load-bearing for the improved purity claim, yet no supporting evidence (e.g., comparison of treated vs. untreated decay rates, surface-state density measurements, or post-treatment DOS verification) is referenced.

    Authors: The effectiveness of the sidewall wet treatment is supported by the measured improvements in SNR and single-photon purity for treated versus untreated structures. However, we recognize that the manuscript does not explicitly reference direct pre-/post-treatment comparisons of decay rates or quantitative surface-state density measurements. In the revised version we will add available time-resolved PL data comparing treated and untreated samples and will qualify the statement to reflect the observed suppression of surface-related recombination without claiming complete elimination or unaltered DOS. Any limitations in the available supporting measurements will be noted. revision: partial

Circularity Check

1 steps flagged

SPE eligibility and generalized framework derived from diameter-dependent dynamics analysis without independent rate or DOS modeling

specific steps
  1. fitted input called prediction [Abstract]
    "Diameter-dependent biexciton-exciton dynamics are analysed to determine the eligibility of QD as a single-photon emitter. ... Surface recombination contributes to inhomogeneous broadening at QD diameters larger than 35 nm. Below 35 nm, density-of-states-corrected Auger gradually becomes the principal biexciton-decay route with further reduction in QD diameter, thereby quenching the possibility of thermal broadening and setting a threshold for SPE. Below 9 nm, the Auger recombination rate becomes manyfold of other decay rates... This study establishes a generalized physical framework for predet"

    The eligibility of the QD as a single-photon emitter and the generalized framework for predetermining SPE probability are explicitly stated to be determined/established by analyzing the diameter-dependent dynamics and trends from the experimental measurements on the same QDs. The specific size thresholds (35 nm, 9 nm) and the claim that DOS-corrected Auger becomes principal (quenching thermal broadening) are set by where the observed changes occur in the data, without independent quantitative extraction of Auger rates or explicit DOS calculations for the fractional-dimension structures; thus the 'prediction' and framework reduce to the inputs by construction.

full rationale

The paper analyzes experimental diameter-dependent biexciton-exciton dynamics, SNR degradation, inhomogeneous broadening, and decay routes from the same set of sidewall-treated InGaN QDs to identify thresholds (35 nm for Auger dominance, 9 nm for multi-photon suppression) and then presents these as a 'generalized physical framework for predetermining SPE probability as a function of QD surface and geometry'. No separate first-principles Auger coefficients, calculated density of states for the fractional-dimension QDs, or rate-equation modeling independent of the observed trends are supplied; the crossover and eligibility are inferred directly from the data trends. This reduces the claimed predictive framework to a restatement of the fitted/observed inputs by construction, constituting partial circularity of the fitted-input-called-prediction type.

Axiom & Free-Parameter Ledger

2 free parameters · 2 axioms · 0 invented entities

Only the abstract is available, so the ledger is necessarily incomplete. The work rests on standard semiconductor carrier-dynamics assumptions plus two size thresholds and a surface-state reduction claim that appear calibrated to the observed trends.

free parameters (2)
  • Diameter thresholds (35 nm and 9 nm)
    Chosen to mark the crossover from surface-recombination to Auger-dominated regimes and the onset of multi-photon suppression; values are stated as observed limits rather than derived from first principles.
  • Auger recombination rate scaling with diameter
    Invoked as becoming 'manyfold' of other rates below 9 nm; the scaling factor and density-of-states correction are not given explicitly and must be fitted to data.
axioms (2)
  • domain assumption Biexciton-exciton cascaded decay is the dominant radiative pathway responsible for the observed single-photon statistics
    Central to interpreting the autocorrelation data as SPE; alternative multi-photon or background processes are assumed negligible after surface treatment.
  • ad hoc to paper Wet chemical treatment removes sidewall surface states without introducing new non-radiative recombination centers or changing the density of states
    Required for the claim that surface recombination probability is minimized while biexciton state filling is maximized.

pith-pipeline@v0.9.0 · 5629 in / 1941 out tokens · 59909 ms · 2026-05-07T05:33:41.445657+00:00 · methodology

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Reference graph

Works this paper leans on

62 extracted references · 62 canonical work pages

  1. [1]

    Quantum Key Distribution with Entangled Photons Generated on Demand by a Quantum Dot,

    F. Basso Basset, M. Valeri, E. Roccia, V. Muredda, D. Poderini, J. Neuwirth, N. Spagnolo, M. B. Rota, G. Carvacho, F. Sciarrino, and R. Trotta, “Quantum Key Distribution with Entangled Photons Generated on Demand by a Quantum Dot,” Sci. Adv., 7 (12), eabe6379 (2021)

    work page 2021

  2. [2]

    Towards Optimal Single-Photon Sources from Polarized Microcavities,

    H. Wang, Y. M. He, T. H. Chung, H. Hu, Y. Yu, S. Chen, X. Ding, M. C. Chen, J. Qin, X. Yang, and R. Z. Liu, “Towards Optimal Single-Photon Sources from Polarized Microcavities,” Nat. Photon., 13 (11), 770-775 (2019)

    work page 2019

  3. [3]

    Quantum Cryptography with Highly Entangled Photons from Semiconductor Quantum Dots,

    C. Schimpf, M. Reindl, D. Huber, B. Lehner, S. F. Covre Da Silva, S. Manna, M. Vyvlecka, P. Walther, and A. Rastelli, “Quantum Cryptography with Highly Entangled Photons from Semiconductor Quantum Dots,” Sci. adv., 7 (16), eabe8905 (2021). 22

    work page 2021

  4. [4]

    Near-Unity Indistinguishability Single Photon Source for Large-Scale Integrated Quantum Optics,

    Ł. Dusanowski, S. H. Kwon, C. Schneider, and S. Höfling, “Near-Unity Indistinguishability Single Photon Source for Large-Scale Integrated Quantum Optics,” Phys. Rev. Lett., 122 (17), 173602 (2019)

    work page 2019

  5. [5]

    On-Chip Deterministic Operation of Quantum Dots in Dual-Mode Waveguides for a Plug-and-Play Single-Photon Source,

    R. Uppu, H. T. Eriksen, H. Thyrrestrup, A. D. Uğurlu, Y. Wang, S. Scholz, A. D. Wieck, A. Ludwig, M. C. Löbl, R. J. Warburton, and P. Lodahl, “On-Chip Deterministic Operation of Quantum Dots in Dual-Mode Waveguides for a Plug-and-Play Single-Photon Source,” Nat. Commun., 11 (1), 1-6 (2020)

    work page 2020

  6. [6]

    Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating,

    S. Kolatschek, C. Nawrath, S. Bauer, J. Huang, J. Fischer, R. Sittig, M. Jetter, S. L. Portalupi, and P. Michler, “Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating,” Nano Lett., 21 (18), 7740-7745 (2021)

    work page 2021

  7. [7]

    Rotational-Invariant Quantum Key Distribution Based on a Quantum Dot Source,

    P. Barigelli, F. Sirovich, G. Carvacho, and F. Sciarrino, “Rotational-Invariant Quantum Key Distribution Based on a Quantum Dot Source,” Opt. Quantum., 3 (6), 518-524 (2025)

    work page 2025

  8. [8]

    Quantum-Dot Single-Photon Sources for the Quantum Internet,

    C. Y. Lu, and J. W. Pan, “Quantum-Dot Single-Photon Sources for the Quantum Internet,” Nat. Nanotechnol., 16 (12), 1294-1296 (2021)

    work page 2021

  9. [9]

    Bright Single-Photon Sources in the Telecom Band by Deterministically Coupling Single Quantum Dots to a Hybrid Circular Bragg Resonator,

    S. W. Xu, Y. M. Wei, R. B. Su, X. S. Li, P. N. Huang, S. F. Liu, X. Y. Huang, Y. Yu, J. Liu, and X. H. Wang, “Bright Single-Photon Sources in the Telecom Band by Deterministically Coupling Single Quantum Dots to a Hybrid Circular Bragg Resonator,” Photonics Res., 10 (8), B1-B6 (2022). 23

    work page 2022

  10. [10]

    Quantum Metrology of Solid-State Single-Photon Sources Using Photon-Number-Resolving Detectors,

    M. V. Helversen, J. Böhm, M. Schmidt, M. Gschrey, J. H. Schulze, A. Strittmatter, S. Rodt, J. Beyer, T. Heindel, and S. Reitzenstein, “Quantum Metrology of Solid-State Single-Photon Sources Using Photon-Number-Resolving Detectors,” New J. Phys., 21 (3), 035007 (2019)

    work page 2019

  11. [11]

    High-Dimensional Quantum Key Distribution Using Orbital Angular Momentum of Single Photons from a Colloidal Quantum Dot at Room Temperature,

    D. Halevi, B. Lubotzky, K. Sulimany, E. G. Bowes, J. A. Hollingsworth, Y. Bromberg, and R. Rapaport, “High-Dimensional Quantum Key Distribution Using Orbital Angular Momentum of Single Photons from a Colloidal Quantum Dot at Room Temperature,” Opt. Quantum., 2 (5), 351-357 (2024)

    work page 2024

  12. [12]

    Quantum Key Distribution Testbed Using a Plug&Play Telecom-Wavelength Single-Photon Source,

    T. Gao, L. Rickert, F. Urban, J. Große, N. Srocka, S. Rodt, A. Musiał, K. Żołnacz, P. Mergo, K. Dybka, and W. A. Urbańczyk, “Quantum Key Distribution Testbed Using a Plug&Play Telecom-Wavelength Single-Photon Source,” Appl. Phys. Rev., 9 (1), 011412 (2022)

    work page 2022

  13. [13]

    Quantum Dots for Photonic Quantum Information Technology,

    T. Heindel, J. H. Kim, N. Gregersen, A. Rastelli, and S. Reitzenstein, “Quantum Dots for Photonic Quantum Information Technology,” Adv. Opt. Photonics., 15 (3), 613-738 (2023)

    work page 2023

  14. [14]

    Quantum Communication Using Semiconductor Quantum Dots,

    D. A. Vajner, L. Rickert, T. Gao, K. Kaymazlar, and T. Heindel, “Quantum Communication Using Semiconductor Quantum Dots,” Adv. Quantum Technol., 5 (7), 2100116 (2022)

    work page 2022

  15. [15]

    Semiconductor Quantum Dots: Technological Progress and Future Challenges,

    F. P. García de Arquer , D. V. Talapin, V. I. Klimov, Y. Arakawa, M. Bayer, and E. H. Sargent, “Semiconductor Quantum Dots: Technological Progress and Future Challenges,” Science., 373 (6555), eaaz8541 (2021)

    work page 2021

  16. [16]

    Quantum-Dot-Based Deterministic Photon–Emitter Interfaces for Scalable Photonic Quantum Technology,

    R. Uppu, L. Midolo, X. Zhou, J. Carolan, and P. Lodahl, “Quantum-Dot-Based Deterministic Photon–Emitter Interfaces for Scalable Photonic Quantum Technology,” Nat. nanotechnol., 16 (12),1308-1317 (2021). 24

    work page 2021

  17. [17]

    Versatile Single-Photon-Based Quantum Computing Platform,

    N. Maring, A. Fyrillas, M. Pont, E. Ivanov, P. Stepanov, N. Margaria, W. Hease, A. Pishchagin, A. Lemaître, I. Sagnes, and T. H. A . Au, “Versatile Single-Photon-Based Quantum Computing Platform,” Nat. Photon., 18 (6), 603-609 (2024)

    work page 2024

  18. [18]

    Single Photons on Demand from a Single Molecule at Room Temperature,

    B. Lounis, and W. E. Moerner, “Single Photons on Demand from a Single Molecule at Room Temperature,” Nat., 407 (6803), 491-493 (2000)

    work page 2000

  19. [19]

    Electrically Driven Single-Photon Source at Room Temperature in Diamond,

    N. Mizuochi, T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi, M. Nothaft, P. Neumann, A. Gali, F. Jelezko, and J. Wrachtrup, “Electrically Driven Single-Photon Source at Room Temperature in Diamond,” Nat. Photon., 6 (5), 299-303 (2012)

    work page 2012

  20. [20]

    Single-Photon Generation: Materials, Techniques, and the Rydberg Exciton Frontier,

    A. Keni, K. Barua, K. Heshami, A. Javadi, and H. Alaeian, “Single-Photon Generation: Materials, Techniques, and the Rydberg Exciton Frontier,” Opt. Mater. Express., 15 (4), 626- 643 (2025)

    work page 2025

  21. [21]

    High- Fidelity Photonic Quantum Logic Gate Based on Near-Optimal Rydberg Single-Photon Source,

    S. Shi, B. Xu, K. Zhang, G. S. Ye, D. S. Xiang, Y. Liu, J. Wang, D. Su, and L. Li, “High- Fidelity Photonic Quantum Logic Gate Based on Near-Optimal Rydberg Single-Photon Source,” Nat. Commun., 13 (1), 4454 (2022)

    work page 2022

  22. [22]

    Near-Optimal Single-Photon Sources in the Solid State,

    N. Somaschi, V. Giesz, L. De Santis , J. C. Loredo, M. P. Almeida, G. Hornecker, S. L. Portalupi, T. Grange, C. Anton, J. Demory, and C. Gómez, “Near-Optimal Single-Photon Sources in the Solid State,” Nat. Photon., 10 (5), 340-345 (2016)

    work page 2016

  23. [23]

    Room-Temperature, Highly Pure Single-Photon Sources from All-Inorganic Lead Halide Perovskite Quantum Dots,

    C. Zhu, M. Marczak, L. Feld, S. C. Boehme, C. Bernasconi, A. Moskalenko, I. Cherniukh, D. Dirin, M. I. Bodnarchuk, M. V. Kovalenko, and G. Rainò, “Room-Temperature, Highly Pure Single-Photon Sources from All-Inorganic Lead Halide Perovskite Quantum Dots,” Nano lett., 22 (9), 3751-3760 (2022). 25

    work page 2022

  24. [24]

    A Bright and Fast Source of Coherent Single Photons,

    N. Tomm, A. Javadi, N. O. Antoniadis, D. Najer, M. C. Löbl, A. R. Korsch, R. Schott, S. R. Valentin, A. D. Wieck, A. Ludwig, and R. J. Warburton, “A Bright and Fast Source of Coherent Single Photons,” Nat. Nanotechnol., 16 (4), 399-403 (2021)

    work page 2021

  25. [25]

    Engineered Quantum Dot Single-Photon Sources,

    S. Buckley, K. Rivoire, and J. Vučković, “Engineered Quantum Dot Single-Photon Sources,” Rep. Prog. Phys., 75 (12), 126503 (2012)

    work page 2012

  26. [26]

    The Race for the Ideal Single-Photon Source is on ,

    S. Thomas, and P. Senellart, “The Race for the Ideal Single-Photon Source is on ,” Nat. Nanotechnol., 16 (4), 367-368 (2021)

    work page 2021

  27. [27]

    Deterministic and Electrically Tunable Bright Single-Photon Source,

    A. K. Nowak, S. L. Portalupi, V. Giesz, O. Gazzano, C. Dal Savio, P. F. Braun, K. Karrai, C. Arnold, L. Lanco, I. Sagnes, and A. Lemaître, “Deterministic and Electrically Tunable Bright Single-Photon Source,” Nat. Commun., 5 (1), 1-7 (2014)

    work page 2014

  28. [28]

    InGaN Quantum Dots with Short Exciton Lifetimes Grown on Polar c-Plane by Metal-Organic Chemical Vapor Deposition,

    C. Zhao, C. W. Tang, G. Cheng, J. Wang, and K. M. Lau, “InGaN Quantum Dots with Short Exciton Lifetimes Grown on Polar c-Plane by Metal-Organic Chemical Vapor Deposition,” Mater. Res. Express., 7 (11), 115903 (2020)

    work page 2020

  29. [29]

    Surface Morphology and Optical Properties of InGaN Quantum Dots with Varying Growth Interruption Time,

    Y. Li, Z. Jin, Y. Han, C. Zhao, J. Huang, C. W. Tang, J. Wang, and K. M. Lau, “Surface Morphology and Optical Properties of InGaN Quantum Dots with Varying Growth Interruption Time,” Mater. Res. Express., 7 (1), 015903 (2019)

    work page 2019

  30. [30]

    Single‐Photon Emission from a Further Confined InGaN/GaN Quantum Disc via Reverse‐Reaction Growth,

    X. Sun, P. Wang, B. Sheng, T. Wang, Z. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, and B. Shen, “Single‐Photon Emission from a Further Confined InGaN/GaN Quantum Disc via Reverse‐Reaction Growth,” Quantum Eng., 1 (3), e20 (2019). 26

    work page 2019

  31. [31]

    Dual-Wavelength Switching in InGaN Quantum Dot Micro-Cavity Light-Emitting Diodes,

    Y. Mei, Y. H. Chen, L. Y. Ying, A. Q. Tian, G. E. Weng, L. Hao, J. P. Liu, and B. P. Zhang, “Dual-Wavelength Switching in InGaN Quantum Dot Micro-Cavity Light-Emitting Diodes,” Opt. Express., 30 (15), 27472-27481 (2022)

    work page 2022

  32. [32]

    InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes,

    W. Ou, Y. Mei, D. Iida, H. Xu, M. Xie, Y. Wang, L. Y. Ying, B. P. Zhang, and K. Ohkawa, “InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes,” J. Lightwave Technol., 40 (13), 4337-4343 (2022)

    work page 2022

  33. [33]

    Pure Single-Photon Emission from an InGaN/GaN Quantum Dot,

    M. J. Holmes, T. Zhu, F. P. Massabuau, J. Jarman, R. A. Oliver, and Y. Arakawa, “Pure Single-Photon Emission from an InGaN/GaN Quantum Dot,” APL Mater., 9 (6), 061106 (2021)

    work page 2021

  34. [34]

    Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature,

    S. Bhunia, A. Majumder, S. Chatterjee, R. Sarkar, D. Nag, K. Saha, S. Mahapatra, and A. Laha, “Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature,” Appl. Phys. Lett., 125 (4), 044002 (2024)

    work page 2024

  35. [35]

    Femto-Second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural Radial Potential Well and its Dynamic Modulation,

    P. K. Saha, T. Aggarwal, A. Udai, V. Pendem, S. Ganguly, and D. Saha, “Femto-Second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural Radial Potential Well and its Dynamic Modulation,” ACS Photonics. , 7 (9), 2555-2561 (2020)

    work page 2020

  36. [36]

    Room Temperature Single-Photon Emission from InGaN Quantum Dot Ordered Arrays in GaN Nanoneedles,

    P. K. Saha, K. S. Rana, N. Thakur, B. Parvez, S. A. Bhat, S. Ganguly, and D. Saha, “Room Temperature Single-Photon Emission from InGaN Quantum Dot Ordered Arrays in GaN Nanoneedles,” Appl. Phys. Lett., 121 (21), 211101 (2022)

    work page 2022

  37. [37]

    A review of site -controlled compound semiconductor quantum dots for single photon emitters,

    Y. Hou, “A review of site -controlled compound semiconductor quantum dots for single photon emitters,” Mater. Quantum Technol., 5(3), 032001 (2025). 27

    work page 2025

  38. [38]

    Single photon emission and recombination dynamics in self -assembled GaN/AlN quantum dots ,

    J. Stachurski, S. Tamariz, G. Callsen, R. Butté, and N. Grandjean, “Single photon emission and recombination dynamics in self -assembled GaN/AlN quantum dots ,” Light Sci. Appl., 11(1), 114 (2022)

    work page 2022

  39. [39]

    Near-Room-Temperature Single-Photon Emission from a Strongly Confined Piezoelectric In As Quantum Dot ,

    N. G. Chatzarakis, S. Germanis, I. Thyris, C. Katsidis, A. Stavrinidis, G. Konstantinidis, Z. Hatzopoulos, and N. T. Pelekanos, “Near-Room-Temperature Single-Photon Emission from a Strongly Confined Piezoelectric In As Quantum Dot ,” Phys. Rev. Appl., 20(3), 034011 (2023)

    work page 2023

  40. [40]

    P. K. Saha, “Deterministic Fabrication of Uniform and Bright InGaN Quantum Dot Emitters toward Exciton Bohr Radius Regime by a Combination of Dry and Anisotropic, Controlled Wet Etching Techniques,” ACS Appl. Opt. Mater., 4 (1), 190–199 (2026)

    work page 2026

  41. [41]

    Third-Order Antibunching from an Imperfect Single-Photon Source,

    M. J. Stevens, S. Glancy, S. W. Nam, and R. P. Mirin, “Third-Order Antibunching from an Imperfect Single-Photon Source,” Opt. Express., 22 (3), 3244-3260 (2014)

    work page 2014

  42. [42]

    Blue-to-Green Single Photons from InGaN/GaN Dot-in-a-Nanowire Ordered Arrays,

    E. Chernysheva, Ž. Gačević, N. García-Lepetit, H. P. Van der Meulen , M. Müller, F. Bertram, P. Veit, A. Torres-Pardo, J. G. Calbet, J. Christen, and E. Calleja, “Blue-to-Green Single Photons from InGaN/GaN Dot-in-a-Nanowire Ordered Arrays,” Europhys. Lett., 111 (2), 24001 (2015)

    work page 2015

  43. [43]

    Carrier Dynamics in Site-and Structure-Controlled InGaN/GaN Quantum Dots,

    L. Zhang, T. A. Hill, C. H. Teng, B. Demory, P. C. Ku, and H. Deng, “Carrier Dynamics in Site-and Structure-Controlled InGaN/GaN Quantum Dots,” Phys. Rev. B., 90 (24), 245311 (2014)

    work page 2014

  44. [44]

    III‐nitride Quantum Dots for Ultra‐ Efficient Solid‐State Lighting,

    Jr. J. J. Wierer, N. Tansu, A. J. Fischer, and J. Y. Tsao, “III‐nitride Quantum Dots for Ultra‐ Efficient Solid‐State Lighting,” Laser Photonics Rev., 10 (4), 612-622 (2016). 28

    work page 2016

  45. [45]

    Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence ,

    C. Becht, U. T. Schwarz, M. Binder, and B. Galler, “Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence ,” Phys. Status Solidi B., 260 (8), 2200565 (2023)

    work page 2023

  46. [46]

    Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures,

    Y. He, and G. Ouyang, “Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures,” J. Phys. Chem. C., 121 (42), 23811-23816 (2017)

    work page 2017

  47. [47]

    Excitons and Biexcitons in InGaN Quantum Dot like Localization Centers,

    S. Amloy, K. F. Karlsson, M. O. Eriksson, J. Palisaitis, P. Å. Persson, Y. T. Chen, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen, and P. O. Holtz, “Excitons and Biexcitons in InGaN Quantum Dot like Localization Centers,” Nanotechnol., 25 (49), 495702 (2014)

    work page 2014

  48. [48]

    Temperature Dependence of the Auger Recombination Coefficient in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes,

    H. Y. Ryu, G. H. Ryu, C. Onwukaeme, and B. Ma, “Temperature Dependence of the Auger Recombination Coefficient in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes,” Opt. Express., 28 (19), 27459-27472 (2020)

    work page 2020

  49. [49]

    Carrier Density Dependent Auger Recombination in c -Plane (In, Ga) N/GaN Quantum Wells: Insights from Atomistic Calculations,

    J. M. McMahon, E. Kioupakis, and S. Schulz, “Carrier Density Dependent Auger Recombination in c -Plane (In, Ga) N/GaN Quantum Wells: Insights from Atomistic Calculations,” J. Phys. D: Appl. Phys., 57 (12), 125102 (2023)

    work page 2023

  50. [50]

    Auger Recombination in InGaN Measured by Photoluminescence,

    Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, M. R. Krames, “Auger Recombination in InGaN Measured by Photoluminescence,” Appl. Phys. Lett., 91 (14), 141101 (2007)

    work page 2007

  51. [51]

    Aggarwal, A

    T. Aggarwal, A. Udai, P. K. Saha, S. Ganguly, P. Bhattacharya, and D. Saha, “Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs,” ACS Appl. Mater. Interfaces., 14 (11), 13812-13819 (2022). 29

    work page 2022

  52. [52]

    Theoretical and Experimental Analysis of Radiative Recombination Lifetimes in Nonpolar InGaN/GaN Quantum Dots,

    S. Kanta Patra, T. Wang, T. J. Puchtler, T. Zhu, R. A. Oliver, R. A. Taylor, and S. Schulz, “Theoretical and Experimental Analysis of Radiative Recombination Lifetimes in Nonpolar InGaN/GaN Quantum Dots,” Phys. Status Solidi B., 254 (8), 1600675 (2017)

    work page 2017

  53. [53]

    High Temperature Stability in Non‐Polar (11 ̄2 0) InGaN Quantum Dots: Exciton and Biexciton Dynamics,

    B. P. Reid, T. Zhu, C. C. Chan, C. Kocher, F. Oehler, R. Emery, M. J. Kappers, R. A. Oliver, R. A. Taylor, “High Temperature Stability in Non‐Polar (11 ̄2 0) InGaN Quantum Dots: Exciton and Biexciton Dynamics,” Phys. Status Solidi C., 11 (3-4), 702-705 (2014)

    work page 2014

  54. [54]

    Dynamic Characteristics of the Exciton and the Biexciton in a Single InGaN Quantum Dot,

    S. Amloy, E. S. Moskalenko, M. Eriksson, K. F. Karlsson, Y. T. Chen, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen, and P. O. Holtz, “Dynamic Characteristics of the Exciton and the Biexciton in a Single InGaN Quantum Dot,” Appl. Phys. Lett., 101 (6), 061910 (2012)

    work page 2012

  55. [55]

    Positive Binding Energy of a Biexciton Confined in a Localization Center Formed in a Single In x Ga 1− x N/GaN Quantum Disk,

    R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive Binding Energy of a Biexciton Confined in a Localization Center Formed in a Single In x Ga 1− x N/GaN Quantum Disk,” Phys. Rev. B- Condens. Matter Mater. Phys., 79 (15), 155307 (2009)

    work page 2009

  56. [56]

    Optical Properties of Single InGaN Quantum Dots and Their Devices,

    K. Sebald, J. Kalden, H. Lohmeyer, and J. Gutowski, “Optical Properties of Single InGaN Quantum Dots and Their Devices,” Phys. Status Solidi B, 248 (8), 1777-1786 (2011)

    work page 2011

  57. [57]

    Improved Performance of InGaN/GaN Multiple-Quantum-Wells Photovoltaic Devices on Free-Standing GaN Substrates with TMAH Treatment,

    N. Hu, T. Fujisawa, T. Kojima, T. Egawa, and M. Miyoshi, “Improved Performance of InGaN/GaN Multiple-Quantum-Wells Photovoltaic Devices on Free-Standing GaN Substrates with TMAH Treatment,” Sol. Energy Mater. Sol. Cells., 275, 113025 (2024)

    work page 2024

  58. [58]

    TMAH- Based Wet Surface Pre-treatment for Reduction of Leakage Current in AlGaN/GaN MIS- HEMTs,

    Y. J. Yoon, J. H. Seo, M. S. Cho, H. S. Kang, C. H. Won, I. M. Kang, and J. H. Lee, “TMAH- Based Wet Surface Pre-treatment for Reduction of Leakage Current in AlGaN/GaN MIS- HEMTs,” Solid-State Electron., 124, 54-57 (2016). 30

    work page 2016

  59. [59]

    Effects of a Photo- Assisted Electrochemical Etching Process Removing Dry-Etching Damage in GaN,

    S. Matsumoto, M. Toguchi, K. Takeda, T. Narita, T. Kachi, and T. Sato, “Effects of a Photo- Assisted Electrochemical Etching Process Removing Dry-Etching Damage in GaN,” Jpn. J. Appl. Phys., 57 (12), 121001 (2018)

    work page 2018

  60. [60]

    Higher-Order Photon Correlation as a Tool to Study Exciton Dynamics in Quasi-2D Nanoplatelets,

    D. Amgar, G. Yang, R. Tenne, and D. Oron, “Higher-Order Photon Correlation as a Tool to Study Exciton Dynamics in Quasi-2D Nanoplatelets,” Nano Lett., 19 (12), 8741-8748 (2019)

    work page 2019

  61. [61]

    Third-Order Photon Cross-Correlations in Resonance Fluorescence,

    Y. Nieves, and A. Muller, “Third-Order Photon Cross-Correlations in Resonance Fluorescence,” Phys. Rev. B., 102 (15), 155418 (2020)

    work page 2020

  62. [62]

    Nonclassical Higher-Order Photon Correlations with a Quantum Dot Strongly Coupled to a Photonic-Crystal Nanocavity,

    A. Rundquist, M. Bajcsy, A. Majumdar, T. Sarmiento, K. Fischer, K. G. Lagoudakis, S. Buckley, A. Y. Piggott, and J. Vučković, “Nonclassical Higher-Order Photon Correlations with a Quantum Dot Strongly Coupled to a Photonic-Crystal Nanocavity,” Phys. Rev. A., 90 (2), 023846 (2014)

    work page 2014