Varying the vertical arrangement of Zr and Al dopants in hafnium oxide controls phase formation and improves FeFET gate stack endurance and remanent polarization.
Hoffman , author X
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Enhanced Performance of FeFET Gate Stack via Heterogeneously co-doped Ferroelectric HfO$_2$ Films
Varying the vertical arrangement of Zr and Al dopants in hafnium oxide controls phase formation and improves FeFET gate stack endurance and remanent polarization.