KPFM shows work function rising with layer number in MoS2 bilayers, with larger differences in AB stacking due to stronger interlayer coupling, plus n-type photogating from substrate effects and surface traps.
Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides mos 2, mose 2, ws 2, and wse 2.Physical Review B, 89(7):075409
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Nanoscale mapping of stacking-dependent work function and local photoresponse in CVD-grown MoS2 bilayers by KPFM
KPFM shows work function rising with layer number in MoS2 bilayers, with larger differences in AB stacking due to stronger interlayer coupling, plus n-type photogating from substrate effects and surface traps.