P-wave orbital magnetism protected by combined translation and time-reversal symmetry is proposed to originate from loop-current-induced orbital textures in a 2D Dirac lattice model, measurable via orbital Hall conductivity.
Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field
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abstract
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either uncompensated moments or high-field spin-flop transitions. Here, we demonstrate low-field switching in the fully compensated antiferromagnet CeNiAsO -- a material recently proposed as a candidate for $p$-wave magnetism. Using an in-plane magnetic field well below the spin-flop threshold, we selectively stabilize one of two degenerate antiferromagnetic domains with mutually orthogonal sublattice orientations. This field-induced domain selection allows reversible and nonvolatile switching of a giant in-plane resistivity anisotropy up to $\sim35\,\%$ -- a magnitude that far exceeds conventional anisotropy signals driven by spin-orbit coupling. The switching behavior persists across both the low-temperature noncollinear N\'{e}el phase and the higher-temperature collinear spin-density-wave phase, highlighting the universality of the domain-selection mechanism. Our work establishes a practical approach for manipulating compensated antiferromagnets with modest magnetic fields and underscores their potential for high-performance spintronic devices based on giant and switchable resistivity anisotropy.
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A universal analytic formula for the TMR ratio in X-wave magnet junctions is derived, proportional to |J|/(N_X Γ) for small Γ, in contrast to the J²/Γ² dependence for ferromagnets.
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$P$-wave Orbital Magnetism
P-wave orbital magnetism protected by combined translation and time-reversal symmetry is proposed to originate from loop-current-induced orbital textures in a 2D Dirac lattice model, measurable via orbital Hall conductivity.
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Tunneling magnetoresistance in a junction made of $X$-wave magnets with $X=p,d,f,g,i$
A universal analytic formula for the TMR ratio in X-wave magnet junctions is derived, proportional to |J|/(N_X Γ) for small Γ, in contrast to the J²/Γ² dependence for ferromagnets.