Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.
Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity,
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Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with optimal regimes identified by quantum Fisher information.
3D simulations of nanosheet-based silicon spin qubits show millivolt bias variations at plunger and barrier gates can reduce two-qubit gate fidelity below 99%.
Spin-qubit operation is framed as a modular automation problem with five modules to enable scalable stable arrays via interfaces, standardized data products, and workflow metrics.
citing papers explorer
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Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.
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Probing Electrostatic Disorder via g-Tensor Geometry
Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with optimal regimes identified by quantum Fisher information.
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Simulation of Two-qubit Gate Variability and Fidelity of Spin Qubits Built on Nanosheet Technology
3D simulations of nanosheet-based silicon spin qubits show millivolt bias variations at plunger and barrier gates can reduce two-qubit gate fidelity below 99%.
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Overcoming Configuration Bottleneck: Modular Pathways to Stable Semiconductor Spin-Qubit Arrays
Spin-qubit operation is framed as a modular automation problem with five modules to enable scalable stable arrays via interfaces, standardized data products, and workflow metrics.