Commercial SiC MOSFETs exhibit large gate hysteresis, threshold voltage shifts, and subthreshold swing deterioration at deep cryogenic temperatures, indicating electrostatic instability likely caused by carrier freeze-out and high interface trap density.
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Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures
Commercial SiC MOSFETs exhibit large gate hysteresis, threshold voltage shifts, and subthreshold swing deterioration at deep cryogenic temperatures, indicating electrostatic instability likely caused by carrier freeze-out and high interface trap density.