Combined single-nanowire electroluminescence and I-V measurements reveal around 12% of nanowires emit in the working ensemble LED, with per-wire current densities of 20 to 1000 A/cm2.
Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
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abstract
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range from 2.2 eV to 2.5 eV depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.
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physics.app-ph 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
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Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
Combined single-nanowire electroluminescence and I-V measurements reveal around 12% of nanowires emit in the working ensemble LED, with per-wire current densities of 20 to 1000 A/cm2.