Pre-registered validation of an ML Na-cathode voltage screen yields 0.67 V MAE against experiment, with Materials Project PBE+U references 0.54 V low and dominating the error.
Oxidation energies of transition metal oxides within the GGA+U framework
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Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.
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Computational references are not experiments: pre-registered validation of machine-learned sodium-cathode voltages
Pre-registered validation of an ML Na-cathode voltage screen yields 0.67 V MAE against experiment, with Materials Project PBE+U references 0.54 V low and dominating the error.
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Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.