Monolithic Si3N4 platform achieves EPR fidelity 0.9875(3), HOM visibility 0.990(6), and four-photon GHZ fidelity 0.943(8) at 27 Hz—more than 100x prior silicon-photonic rates—using CMOS-compatible 150 mm wafer fabrication.
Silicon nitride passive and active photonic integrated circuits: trends and prospects,
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
years
2026 2verdicts
UNVERDICTED 2representative citing papers
Simulation-based design of a Si3N4/SiO2 aMZI with 500 ps delay, stable 3 dB coupling across C-band, and >0.99 visibility for gigahertz time-bin QKD.
citing papers explorer
-
An ultralow-loss integrated photonic platform for discrete-variable quantum information processing
Monolithic Si3N4 platform achieves EPR fidelity 0.9875(3), HOM visibility 0.990(6), and four-photon GHZ fidelity 0.943(8) at 27 Hz—more than 100x prior silicon-photonic rates—using CMOS-compatible 150 mm wafer fabrication.
-
Phase Stable Integrated Delay Line Asymmetric Mach Zehnder Interferometers Enabled by High Efficiency 3 dB Couplers for Chip Scale QKD
Simulation-based design of a Si3N4/SiO2 aMZI with 500 ps delay, stable 3 dB coupling across C-band, and >0.99 visibility for gigahertz time-bin QKD.