A linearized Boltzmann model in five-terminal geometry shows current partition diagnoses ballistic-hydrodynamic-Ohmic crossover and extracts momentum-relaxing and conserving scattering rates.
Quantum Transport in Semiconductor Nanostructures
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abstract
I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).
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cond-mat.mes-hall 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
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Characterizing electronic scattering rates with transport in multiterminal devices
A linearized Boltzmann model in five-terminal geometry shows current partition diagnoses ballistic-hydrodynamic-Ohmic crossover and extracts momentum-relaxing and conserving scattering rates.