TCAD device simulations and SPICE circuit simulations indicate that spin-dependent charge distributions in a GAA transistor produce distinguishable currents that a conventional CMOS sense amplifier can detect when voltage is dynamically controlled.
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Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor
TCAD device simulations and SPICE circuit simulations indicate that spin-dependent charge distributions in a GAA transistor produce distinguishable currents that a conventional CMOS sense amplifier can detect when voltage is dynamically controlled.