DFT calculations provide electron and hole capture coefficients for N_C and NV defects, matching experiment for N_C and showing excited-state pathways dominate for NV.
For NV0 ⇌NV −, the CCD shows high barriers, resulting in very low capture coefficients (<10 −28 cm3 s−1)
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Charge dynamics at nitrogen impurities and nitrogen-vacancy centers in diamond
DFT calculations provide electron and hole capture coefficients for N_C and NV defects, matching experiment for N_C and showing excited-state pathways dominate for NV.