Sb-mediated facet engineering produces axial InGaAs quantum dots in GaAs nanowires with demonstrated single-photon emission and short lifetimes.
Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy
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Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
Sb-mediated facet engineering produces axial InGaAs quantum dots in GaAs nanowires with demonstrated single-photon emission and short lifetimes.