A buried heterostructure emitter in a dielectric bowtie nanocavity achieves 0.4-0.7 meV coupling strengths in InP/InGaAsP for 10-50 nm gaps by using a confinement-factor approximation that accounts for the emitter's spatial extent.
Anderson, Microelectron
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A deterministic approach for integrating an emitter in a nanocavity with subwavelength light confinement
A buried heterostructure emitter in a dielectric bowtie nanocavity achieves 0.4-0.7 meV coupling strengths in InP/InGaAsP for 10-50 nm gaps by using a confinement-factor approximation that accounts for the emitter's spatial extent.