Wafer-scale 2-inch beta-Ga2O3 MOSFETs fabricated with >3 kV breakdown and reported uniformity in threshold voltage, current density, and breakdown across the wafer.
Thin channel Ga 2O3 MOSFET with 55 GHz f MAX and > 100 V breakdown,
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Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages
Wafer-scale 2-inch beta-Ga2O3 MOSFETs fabricated with >3 kV breakdown and reported uniformity in threshold voltage, current density, and breakdown across the wafer.