A review of III-nitride HEMT high-temperature operation, finding that while devices function above 300°C, long-duration reliability above 400–500°C remains unproven.
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High-temperature operation of III-nitride high-electron-mobility transistors
A review of III-nitride HEMT high-temperature operation, finding that while devices function above 300°C, long-duration reliability above 400–500°C remains unproven.