Pith. sign in

REVIEW 2 major objections 7 minor 115 references

High-temperature operation of III-nitride high-electron-mobility transistors

T0 review · 2 major / 7 minor · reviewed 2026-07-07 · glm-5.2

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read GaN transistors work above 300°C, but nobody knows for how long

desk verdict Competent review of III-N HEMT high-temperature operation; the critical-gap framing is the main contribution, with one minor soft spot in the forward-looking recommendations. read the letter →

arxiv 2607.05314 v1 pith:G4XA24BH submitted 2026-07-06 cond-mat.mtrl-sci

Yi-Chen Liu , Jacklyn Zhu , John Niroula , Hridibrata Pal , Tomas Palacios , Savannah R. Eisner This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords iii-nitrideapplicationshemtshigh-temperaturedeviceelectronicshigh-electron-mobilityincluding
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This review examines how III-nitride high-electron-mobility transistors (HEMTs) perform at extreme temperatures, cataloguing what limits them and what material choices could push their endurance further. III-nitride HEMTs exploit a two-dimensional electron gas (2DEG) formed at a heterojunction interface, using polarization fields rather than thermally activated dopants to achieve high carrier density. This gives them an inherent advantage over silicon and other conventional semiconductors at elevated temperatures. The paper surveys demonstrations up to 1000°C for short durations, but identifies a persistent critical gap: no one has shown reliable operation above 400–500°C for more than about a thousand hours. The authors argue that closing this gap requires coordinated progress across four fronts: lattice-matched barriers (InAlN or AlGaN channel/barrier stacks) to suppress strain relaxation, refractory gate metals (Ir, W, Pd/TaSi2) to replace the widely used but thermally unstable Ni/Au, MIS-HEMT dielectrics (such as epitaxial Gd2O3) to block gate leakage, and realistic environmental testing in chemically reactive ambients rather than vacuum or inert gas. The central organizing claim is that the field has proven III-nitride HEMTs can function at extreme temperatures, but has not proven they can survive there long enough for real missions.

What carries the argument

The two-dimensional electron gas (2DEG) at the III-nitride heterojunction interface is the central object. Its density and mobility are controlled by polarization fields in the barrier layer, and its thermal stability depends on the interplay of barrier composition (AlGaN vs. lattice-matched InAlN vs. ScAlN), channel material (GaN vs. wider-bandgap AlGaN), gate metallization (conventional Ni/Au vs. refractory metals), dielectric strategy (amorphous Al2O3 vs. epitaxial Gd2O3), passivation-induced strain, and device geometry (circular vs. linear layouts affecting sidewall trap density).

What would settle it

If long-duration testing of the proposed optimal stack (lattice-matched InAlN barrier, refractory gate, epitaxial Gd2O3 dielectric) in chemically reactive environments above 400°C shows rapid failure from mechanisms not predicted by vacuum or inert-ambient tests — for example, if oxidation of the barrier or corrosion of the gate metal dominates within hours — then the recommended material combination would not actually be optimal, and the gap-closing strategy would need fundamental revision.

Watch

Extended reading notes

Core claim

The paper's central finding is a gap-mapping result: it consolidates reported high-temperature HEMT demonstrations into a temperature-versus-duration landscape and shows that while short-duration operation up to 1000°C has been achieved, there is no demonstration of sustained operation above 400–500°C for more than roughly 10³ hours. The paper identifies the specific degradation pathways that create this gap — strain relaxation in AlGaN barriers above 400°C, Ni/Au gate intermixing starting at 325°C, dielectric crystallization in MIS-HEMT structures, and thermally activated trap formation — and proposes that the most promising route to closing it combines lattice-matched InAlN barriers, AlGaN

Load-bearing premise

The paper's recommended optimal material stack and its 'critical gap' framing are derived largely from short-term tests conducted in vacuum or inert ambient conditions, but the authors themselves note that real applications expose devices to oxidizing, corrosive, or radiative environments that may activate degradation mechanisms not captured by existing data. If environmental factors like oxidation or corrosion dominate long-term failure in ways qualitatively different from,

Editorial extensions

If this is right

  • If the proposed material stack (lattice-matched InAlN barriers, refractory gates, epitaxial Gd2O3 dielectrics) achieves long-duration stability above 400°C, it would enable electronics for Venus surface missions, molten salt reactors, geothermal drilling, and hypersonic vehicles without bulky cooling systems.
  • The gap between short-duration demonstrations and long-duration reliability means current device designs may be optimized for the wrong failure modes — lab tests in vacuum may not capture oxidation, corrosion, or radiation-driven degradation that dominates in real environments.
  • AlGaN-channel HEMTs, which show half the current degradation and three times less on-resistance increase at 300°C compared to GaN channels, could become the preferred channel material for high-temperature operation if their growth challenges and lower room-temperature mobility can be tolerated.
  • The lack of compact models calibrated for high-temperature trap dynamics, gate leakage, and threshold voltage shifts means circuit-level design above 300°C is currently operating without validated simulation tools, limiting the complexity of deployable systems.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit.

Referee Report

2 major / 7 minor

Summary. This review surveys the high-temperature operation of III-nitride HEMTs, covering barrier/channel engineering, substrate selection, passivation, gate metallization, device physics, and circuit-level behavior. The central organizing claim is that III-N HEMTs have demonstrated short-duration functionality above 300°C (up to 1000°C for brief periods) but a persistent 'critical gap' exists in long-duration (>10³ h) demonstrations above 400–500°C. The paper identifies key degradation mechanisms (strain relaxation in AlGaN barriers, Ni/Au gate intermixing, POP scattering mobility degradation, trap activation) and proposes that closing this gap requires coordinated progress in lattice-matched barriers, refractory gate metals, MIS-HEMT dielectrics, and realistic environmental testing. The review is well-structured, covers approximately 120 references, and is transparent about limitations such as Si substrate Hall measurement artifacts and the lack of chemically reactive environment testing.

Significance. The review provides a timely and useful synthesis of a fragmented literature on extreme-temperature III-N HEMTs. Its main strength is the systematic compilation of reported operating temperatures and durations (Fig. 1b, Table 1), which makes the 'critical gap' framing concrete and falsifiable. The device-structure-organized presentation (barrier, channel, substrate, passivation, contacts, geometry) is logical and accessible. The Outlook section explicitly acknowledges the lab-environment extrapolation limitation, which is appropriate scientific practice. The forward-looking recommendation combining lattice-matched InAlN barriers, refractory gates, and MIS-HEMT designs is a reasonable synthesis of the evidence presented, though one component (Gd₂O₃) rests on limited data (see major comments).

major comments (2)
  1. Outlook, final paragraph: The strongest specific recommendation names epitaxial Gd₂O₃ as a 'thermally robust dielectric' for the optimal future stack, but the sole cited evidence (ref 54, Sarkar et al.) reports operation only at 200°C (473 K). The paper itself states that 'longer-duration studies ≥300°C are needed' for both Nd₂O₃ and Gd₂O₃. Recommending Gd₂O₃ as part of the 'most promising route' for >400°C operation is thus a projection from data well below the temperature regime of interest. This is a single component of a multi-part recommendation and is hedged with 'likely,' but it is the most concrete materials recommendation in the paper and should be either (a) qualified more explicitly as speculative relative to the other components (InAlN barriers, refractory gates), or (b) supported by additional rationale for why Gd₂O₃ is expected to outperform alternatives above 400°C.
  2. Table 1, 'High-T Operation' row: The entry for ScAlN barriers lists 'Unproven, but promising,' while the text (Barrier and Channel Layers section) cites Sc₀.₁₅Al₀.₈₅N/GaN HEMTs demonstrated up to 423°C (ref 35). The table should reflect this reported demonstration, or the discrepancy between 'unproven' and the cited 423°C operation should be clarified (e.g., if 'unproven' refers to long-term rather than short-term operation).
minor comments (7)
  1. The reference list contains a duplicate: ref 84 (Yuan et al., 'GaN Ring Oscillators Operational at 500°C') and ref 103 appear to be the same paper.
  2. Table 1, 'Typical x Content' row: the notation 'x≈0.2˘0.3' and 'x≈0.17˘0.18' appears to contain a rendering artifact (likely 'x≈0.2–0.3' and 'x≈0.17–0.18').
  3. Fig. 5b caption: the reference list is extremely long and could be moved to a supplementary table for readability.
  4. Several references are to non-peer-reviewed web sources (refs 9, 13, 14). These are used for application-context temperatures rather than technical claims, but the authors should verify these are the most authoritative sources available.
  5. The term 'strain solidification' (Passivation and Dielectric section, citing ref 51) is unusual; 'strain stabilization' or 'strain stiffening' may be more standard terminology.
  6. Introduction: 'internal electronics environments over 500°C' for hypersonic flight could benefit from a citation, as this is a specific quantitative claim.
  7. Device Physics section: the statement that POP scattering dominates 'above 150 K' (citing refs 48, 75) should clarify whether this refers to the crossover from acoustic phonon scattering or the onset of POP dominance in GaN specifically.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for a careful and constructive review. Both major comments are well-taken and will be addressed in revision.

read point-by-point responses

  1. Referee: Outlook, final paragraph: Gd₂O₃ recommended as 'thermally robust dielectric' but sole evidence (ref 54) is at 200°C only; manuscript itself states ≥300°C studies are needed. Recommending it for >400°C operation is a projection. Should be qualified as speculative or supported by additional rationale.

    Authors: The referee is correct. The only direct experimental evidence for epitaxial Gd₂O₃ in a GaN MIS-HEMT context (ref 54, Sarkar et al.) reports operation at 200°C (473 K), which is well below the 400–500°C regime that defines the critical gap central to this review. Our own text acknowledges that 'longer-duration studies ≥300°C are needed' for both Nd₂O₃ and Gd₂O₃. Recommending Gd₂O₃ as part of the 'most promising route' for >400°C operation without additional justification is therefore an unsupported projection. We will revise the Outlook to explicitly flag Gd₂O₃ as speculative relative to the other components of the recommendation (InAlN lattice-matched barriers and refractory gates, which have direct experimental support above 500°C). We will also add a brief rationale for why epitaxial rare-earth oxides are *expected* to outperform amorphous dielectrics (Al₂O₃, HfO₂) at high temperature—namely, the absence of grain-boundary-mediated leakage that accompanies crystallization of amorphous films, as discussed in our MISHEMT section—but will make clear that this is a materials-physics argument rather than a demonstrated result above 400°C. The hedging language ('likely') will be strengthened to reflect the speculative status of this specific component. revision: yes

  2. Referee: Table 1, 'High-T Operation' row: ScAlN listed as 'Unproven, but promising,' but text cites Sc₀.₁₅Al₀.₈₅N/GaN HEMTs demonstrated up to 423°C (ref 35). Table should reflect this or discrepancy should be clarified.

    Authors: The referee has identified a genuine inconsistency. The Barrier and Channel Layers section states that 'Sc₀.₁₅Al₀.₈₅N/GaN HEMTs have been demonstrated to operate up to 423°C' (ref 35, Hasan et al.), yet Table 1 lists ScAlN high-T operation as 'Unproven, but promising.' The intent of 'unproven' was to convey that long-duration reliability remains unverified—the operation duration at 423°C was not reported—but this meaning is not conveyed by the table entry and the wording contradicts the cited short-term demonstration. We will revise the Table 1 entry to read something along the lines of 'Demonstrated to 423°C (short-term); long-term unproven,' which accurately reflects both the reported result and its duration limitation. This aligns the table with the text and with the duration-based framing used throughout the review. revision: yes

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity found — review paper with self-contained literature survey

full rationale

This is a review/survey paper, not a derivation chain. The central claims (III-N HEMTs demonstrate short-duration operation above 300°C; a critical gap exists for >10³ h demonstrations above 400–500°C; specific material stacks are promising for future work) are supported by aggregation of ~120 external references, not by a first-principles derivation that could be circular by construction. The paper cites several works co-authored by the present authors (e.g., refs 19, 52, 57, 60, 61, 101, 104 by Eisner, Niroula, Palacios), but these appear as individual data points within a broad literature survey — none is invoked as a load-bearing premise for a derivation, uniqueness theorem, or ansatz. The Gd₂O₃ recommendation (ref 54, Sarkar et al., an external group) is acknowledged by the authors as needing longer-duration studies ≥300°C, so it is a hedged forward-looking projection rather than a circular claim. No equations, fitted parameters, or self-citation chains are used to construct predictions from their own inputs. The derivation chain is effectively absent (it is a review), so there is no step that reduces to its inputs by construction.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

No free parameters, no invented entities. The paper is a review and introduces no new model, derivation, or postulated entity. The axioms listed are standard semiconductor physics and domain assumptions used to frame the literature survey.

assumptions (4)
  • standard math Intrinsic carrier concentration increases exponentially with temperature, making narrow-bandgap semiconductors unsuitable above their thermal limits.
    Invoked in the Introduction to motivate wide-bandgap materials. Standard semiconductor physics.
  • domain assumption Polar optical phonon scattering dominates above 150 K and causes mobility degradation scaling as T^-1.8 to T^-2.6 in GaN 2DEGs.
    Invoked in the Device Physics section to explain high-temperature mobility reduction. Well-established but specific exponent range is cited from references 48, 55, 74-76.
  • domain assumption Thermal stress and environmental factors (nitrogen, air, etc.) can accelerate device aging, so reported maximum operating temperatures may not reflect long-term reliability.
    Stated explicitly in the section on barrier and channel layers. This caveat underpins the paper's central 'critical gap' argument.
  • domain assumption All temperatures reported refer to ambient temperature unless otherwise specified.
    Stated in the Impact of Device Structure section. Important because self-heating can make junction temperatures significantly higher than ambient.

how reviews work

0 comments
Cite this review

Pith. "Pith review of High-temperature operation of III-nitride high-electron-mobility transistors." pith.science (2026). https://pith.science/paper/G4XA24BH

@misc{pith2026260705314,
  author       = {Pith},
  title        = {Pith review of: High-temperature operation of III-nitride high-electron-mobility transistors},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/G4XA24BH}},
  note         = {Machine review of arXiv:2607.05314}
}
read the original abstract

High-electron-mobility transistors (HEMTs) made with III-nitride materials are of potential use in high-temperature electronic applications including power electronics, communications, aerospace and space exploration. However, the demands of such applications make it essential to understand the thermal limits and performance evolution of III-nitride HEMTs. Here, we analyze the high-temperature operation of III-nitride HEMTs, examining the impact on material properties, device structure, and circuit-level behavior. We explore the role of critical device layers - including barrier and channel engineering, substrate selection, and passivation strategies - in mitigating high-temperature-induced effects, and evaluate the thermal stability of III-nitride HEMTs in logic, radiofrequency, and power electronics applications. We also highlight key remaining challenges in the design and optimization of III-nitride devices for high-temperature applications.

Figures

Figures reproduced from arXiv: 2607.05314 by the authors.

Figure 1
Figure 1. Temperature and duration requirements for extreme-environment applications and comparison with demonstrated III-N HEMT operating limits a) Operating temperature and target duration ranges for major application domains requiring extreme-environment electronics. Each region represents the approximate mission envelope for a specific environment: These domains illustrate the wide span of temperature–duration requirement… view at source ↗
Figure 2
Figure 2. Comparison of III-N HEMT device structures and reported maximum operating temperatures a) D-mode HEMT. Schematic cross-section showing a Schottky-gate depletion-mode (D-mode) HEMT, where S = source, G = gate, and D = drain. The two-dimensional electron gas (2DEG) forms at the interface between the barrier and channel layers. b) p-GaN HEMT. Structure incorporating a p-GaN gate layer for normally-off operation. The 2D… view at source ↗
Figure 3
Figure 3. Device- and circuit-level failure mechanisms and performance limitations in III-N HEMT electronics a) Device-level mechanisms. Cross-section schematic illustrating major temperature-dependent degradation pathways within the III-N HEMT structure. S, G, and D denote the source, gate, and drain contacts, respectively, and the 2DEG denotes the two-dimensional electron gas at the barrier–channel interface. b) Circuit-lev… view at source ↗
Figures from the paper (2 more)
Figure 4
Figure 4. Figure 4: Temperature dependent electrical performance of III N HEMTs with different barrier and channel layers a) Absolute 2DEG sheet density versus temperature for AlGaN, InAlN, and ScAlN barrier devices (symbols denote reported data sets). b) Sheet density normalized to room …
Figure 5
Figure 5. Figure 5: Thermal degradation pathways of Ni/Au gates and prevalence of gate metal choices in III-N HEMTs a) Schematic illustration of the temperature-dependent morphological evolution of conventional Ni/Au gate electrodes on III-N HEMTs. b) Frequency distribution of gate metals…

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

115 extracted references · 115 canonical work pages

  1. [1]

    K.Extreme-temperature and harsh-environment electronics: physics, technology and applications(IOP Publishing, 2023)

    Khanna, V . K.Extreme-temperature and harsh-environment electronics: physics, technology and applications(IOP Publishing, 2023). 2.Pradhan, D. K.et al.Materials for high-temperature digital electronics.Nat. Rev. Mater.1–18 (2024)

    work page 2023

  2. [2]

    & Greco, G

    Roccaforte, F., Giannazzo, F. & Greco, G. Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices.Micro2, 23–53, DOI: 10.3390/micro2010002 (2022). 11/17

    work page doi:10.3390/micro2010002 2022

  3. [3]

    Huang, Y ., Wang, R., Zhang, Y ., Yang, D. & Pi, X. Compensation of p-type doping in Al-doped 4H-SiC.J. Appl. Phys. 131, 185703, DOI: 10.1063/5.0085510 (2022). https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0085510/16507991/ 185703_1_online.pdf

    work page doi:10.1063/5.0085510 2022

  4. [4]

    & Castro, G

    Watson, J. & Castro, G. A review of high-temperature electronics technology and applications.J. Mater. Sci. Mater. Electron.26, 9226–9235 (2015)

    work page 2015

  5. [5]

    Okojie, R. S. 800 C Silicon Carbide (SiC) Pressure Sensors for Engine Ground Testing. InNational Space and Missile Materials Symposium, GRC-E-DAA-TN32392 (2016)

    work page 2016

  6. [6]

    Zhang, Y .et al.Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality.Nat. Rev. Electr. Eng.1–18 (2025)

    work page 2025

  7. [7]

    Normann, R. A. First high-temperature electronics products survey 2005. Tech. Rep., Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA . . . (2006)

    work page 2005

  8. [8]

    US aiming to ‘crack the code’ on deploying geothermal energy at scale

    The Guardian. US aiming to ‘crack the code’ on deploying geothermal energy at scale. https://www.theguardian.com/ environment/2024/apr/02/geothermal-energy-electricity (2024). Accessed: 2024-05-02

    work page 2024

Show all 115 references
  1. [9]

    Serp, J.et al.The molten salt reactor (MSR) in generation IV: overview and perspectives.Prog. Nucl. Energy77, 308–319 (2014)

    2014

  2. [10]

    & Mairet, L

    Valentian, D., Koppel, C., Mairet, P. & Mairet, L. Venus sample return mission revisited.Exp. Astron.54, 597–616 (2022)

    2022

  3. [11]

    Law of cooling, heat conduction and Stefan-Boltzmann radiation laws fitted to experimental data for bones irradiated by CO2 laser.Biomed

    Lévesque, L. Law of cooling, heat conduction and Stefan-Boltzmann radiation laws fitted to experimental data for bones irradiated by CO2 laser.Biomed. optics express5, 701–712 (2014)

    2014

  4. [12]

    Haber process and Contact process - Higher - Making fertiliser - OCR Gateway - GCSE Chemistry (Single Science) Revision

    BBC Bitesize. Haber process and Contact process - Higher - Making fertiliser - OCR Gateway - GCSE Chemistry (Single Science) Revision. https://www.bbc.co.uk/bitesize/guides/zxy9ng8/revision/5 (2023)

    2023

  5. [13]

    J.D. Power. How Hot Does A Car Exhaust Pipe Get? https://www.jdpower.com/cars/shopping-guides/ how-hot-does-a-car-exhaust-pipe-get (2024)

    2024

  6. [14]

    Medjdoub, F.et al.Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices? In2006 International Electron Devices Meeting, 1–4, DOI: 10.1109/IEDM.2006.346935 (2006)

    2006 doi

  7. [15]

    Maier, D.et al.InAlN/GaN HEMTs for Operation in the 1000°C Regime: A First Experiment.IEEE Electron Device Lett.33, 985–987 (2012)

    2012

  8. [16]

    J., Yalamarthy, A

    Suria, A. J., Yalamarthy, A. S., So, H. & Senesky, D. G. DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600° C in air.Semicond. Sci. Technol.31, 115017 (2016)

    2016

  9. [17]

    H.et al.Extreme temperature operation of ultra-wide bandgap AlGaN high electron mobility transistors.IEEE Transactions on Semicond

    Carey, P. H.et al.Extreme temperature operation of ultra-wide bandgap AlGaN high electron mobility transistors.IEEE Transactions on Semicond. Manuf.32, 473–477 (2019)

    2019

  10. [18]

    Niroula, J.et al.Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500° C.2024 Device Res. Conf. (DRC)1–2 (2024)

    2024

  11. [19]

    In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 40–44 (2022)

    Yuan, M.et al.High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology. In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 40–44 (2022)

    2022

  12. [20]

    & Zhu, W

    Lee, H., Ryu, H., Kang, J. & Zhu, W. Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer. IEEE Electron Device Lett.45, 312–315 (2024)

    2024

  13. [21]

    Xie, Q.et al.Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments. Appl. Phys. Lett.124(2024)

    2024

  14. [22]

    & Zhu, W

    Lee, H., Ryu, H., Kang, J. & Zhu, W. High temperature operation of E-mode and D-mode AlGaN/GaN MIS-HEMTs with recessed gates.IEEE J. Electron Devices Soc.11, 167–173 (2023)

    2023

  15. [23]

    Cui, M.et al.Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters.Jpn. J. Appl. Phys.58, 056505 (2019)

    2019

  16. [24]

    In2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 213–216 (IEEE, 2015)

    Liu, C.et al.Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance. In2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 213–216 (IEEE, 2015)

    2015

  17. [25]

    IEEE Transactions on Electron Devices68, 1000–1005, DOI: 10.1109/TED.2021.3049764 (2021)

    Liu, C.et al.Effect of Atmosphere on Electrical Characteristics of AlGaN/GaN HEMTs Under Hot-Electron Stress. IEEE Transactions on Electron Devices68, 1000–1005, DOI: 10.1109/TED.2021.3049764 (2021). 27.Gaska, R.et al.Novel AlInN/GaN integrated circuits operating up to 500 C.S...

    2021 doi

  18. [26]

    H.et al.Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates.J

    Lee, I. H.et al.Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates.J. Korean Phys. Soc.66, 61–64 (2015)

    2015

  19. [27]

    applied physics87, 334–344 (2000)

    Ambacher, O.et al.Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures.J. applied physics87, 334–344 (2000)

    2000

  20. [28]

    & Usman, M

    Hidayat, W. & Usman, M. Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance.Eng. Res. Express6, 025307 (2024)

    2024

  21. [29]

    Chen, D.et al.Temperature dependence of strain in Al0. 22Ga0. 78N/GaN heterostructures with and without Si3N4 passivation.Thin solid films515, 4384–4386 (2007)

    2007

  22. [30]

    & Ghosal, A

    Mazumdar, K., Kala, S. & Ghosal, A. Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT. Superlattices Microstruct.125, 120–124 (2019)

    2019

  23. [31]

    In2009 Device Research Conference, 285–286 (2009)

    Maier, D.et al.Above 500 C Operation of InAlN/GaN HEMTs. In2009 Device Research Conference, 285–286 (2009)

    2009

  24. [32]

    S.et al.Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.Rev

    Alpert, H. S.et al.Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.Rev. Sci. Instruments91, 25003 (2020)

    2020

  25. [33]

    T.et al.Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor.Appl

    Hasan, M. T.et al.Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor.Appl. Phys. Lett.125(2024)

    2024

  26. [34]

    T.et al.Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates.Appl

    Hardy, M. T.et al.Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates.Appl. Phys. Lett.110 (2017)

    2017

  27. [35]

    IEEE Electron Device Lett.29, 661–664 (2008)

    Zimmermann, T.et al.AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance. IEEE Electron Device Lett.29, 661–664 (2008)

    2008

  28. [36]

    & Medjdoub, F

    Harrouche, K., Kabouche, R., Okada, E. & Medjdoub, F. High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation.IEEE J. Electron Devices Soc.7, 1145–1150 (2019)

    2019

  29. [37]

    physics express3, 121003 (2010)

    Tokuda, H.et al.High Al composition AlGaN-channel high-electron-mobility transistor on AlN substrate.Appl. physics express3, 121003 (2010)

    2010

  30. [38]

    letters50, 211–212 (2014)

    Yafune, N.et al.AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation.Electron. letters50, 211–212 (2014)

    2014

  31. [39]

    Hatano, M.et al.Superior DC and RF performance of AlGaN-channel HEMT at high temperatures.IEICE transactions on electronics95, 1332–1336 (2012)

    2012

  32. [40]

    & Jimbo, T

    Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates.Appl. physics letters80, 2186–2188 (2002)

    2002

  33. [41]

    Cuerdo, R.et al.High temperature behaviour of GaN HEMT devices on Si (111) and sapphire substrates.physica status solidi c5, 1971–1973 (2008)

    1971

  34. [42]

    Bose, A.et al.A temperature stable amplifier characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si.IEEE Access9, 57046–57053 (2021)

    2021

  35. [43]

    & Suda, J

    Tanaka, D., Iso, K., Makisako, R., Ando, Y . & Suda, J. Electrical characterization of AlGaN/GaN-HEMTs on semi- insulating GaN substrates doped with Fe, C, or Mn and grown by hydride vapor phase epitaxy.IEEE Transactions on Electron Devices(2024)

    2024

  36. [44]

    In2010 IEEE International Reliability Physics Symposium, 146–151 (IEEE, 2010)

    Marcon, D.et al.High temperature on-and off-state stress of GaN-on-Si HEMTs with in-situ Si 3 N 4 cap layer. In2010 IEEE International Reliability Physics Symposium, 146–151 (IEEE, 2010). 47.Danesin, F.et al.Thermal storage effects on AlGaN/GaN HEMT.Microelectron. Reliab.48, 1...

    2010

  37. [45]

    & Kuzuhara, M

    Tokuda, H., Yamazaki, J. & Kuzuhara, M. High temperature electron transport properties in AlGaN/GaN heterostructures. J. Appl. Phys.108(2010)

    2010

  38. [46]

    Maier, D.et al.Testing the temperature limits of GaN-based HEMT devices.IEEE Transactions on device materials reliability10, 427–436 (2010)

    2010

  39. [47]

    Hou, M.et al.Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600° C in oxidizing and inert environments.J. Appl. Phys.122(2017)

    2017

  40. [48]

    G., Cai, S

    Feng, Z., Zhou, Y . G., Cai, S. & Lau, K. M. Enhanced thermal stability of the two-dimensional electron gas in GaN/ AlGaN/ GaN heterostructures by Si3N4 surface-passivation-induced strain solidification.Appl. physics letters85, 5248–5250 (2004). 13/17

    2004

  41. [49]

    IEEE Electron Device Lett.(2025)

    Niroula, J.et al.High Temperature AlGaN/GaN MISHEMT with W/AlON Gate Stack and I max> 1 A/mm at 500° C. IEEE Electron Device Lett.(2025)

    2025

  42. [50]

    In2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1–3 (2024)

    Singh, U.et al.Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd 2 O 3/AlGaN/GaN MOSHEMT. In2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1–3 (2024)

    2024

  43. [51]

    Sarkar, R.et al.Epi-Gd 2 O 3-MOSHEMT: A potential solution toward leveraging the application of AlGaN/GaN/Si HEMT with improved I ON/I OFF operating at 473 K.IEEE Transactions on Electron Devices68, 2653–2660 (2021)

    2021

  44. [52]

    Tan, W.et al.High temperature performance of AlGaN/GaN HEMTs on Si substrates.Solid-State Electron.50, 511–513 (2006)

    2006

  45. [53]

    A., Miller, R

    Chapin, C. A., Miller, R. A., Dowling, K. M., Chen, R. & Senesky, D. G. InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments.Sensors Actuators A: Phys.263, 216–223 (2017)

    2017

  46. [54]

    R.et al.Investigation of InAlN/GaN Circular Transistors for Venus and Other High-Temperature Applications

    Eisner, S. R.et al.Investigation of InAlN/GaN Circular Transistors for Venus and Other High-Temperature Applications. IEEE Transactions on Electron Devices(2025)

    2025

  47. [55]

    & Roccaforte, F

    Greco, G., Iucolano, F. & Roccaforte, F. Ohmic contacts to Gallium Nitride materials.Appl. Surf. Sci.383, 324–345 (2016)

    2016

  48. [56]

    & Lim, J.-W

    Lee, J.-M., Min, B.-G., Ju, C.-W., Ahn, H.-K. & Lim, J.-W. High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors.Curr. Appl. Phys.17, 157–161 (2017)

    2017

  49. [57]

    R.et al.Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment

    Eisner, S. R.et al.Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment. In 2021 IEEE Aerospace Conference (50100), 1–12 (IEEE, 2021)

    2021

  50. [58]

    Niroula, J.et al.High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500° C.Appl. Phys. Lett.124(2024)

    2024

  51. [59]

    Rasel, M. A. J.et al.Temperature-induced degradation of GaN HEMT: An in situ heating study.J. Vac. Sci. & Technol. B 42(2024)

    2024

  52. [60]

    Reliab.51, 1717–1720 (2011)

    Macron, D.et al.GaN-based HEMTs tested under high temperature storage test.Microelectron. Reliab.51, 1717–1720 (2011)

    2011

  53. [61]

    Islam, A. E.et al.Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With 140-nm Gate Length.IEEE Transactions on Electron Devices71, 1805–1811 (2024)

    2024

  54. [62]

    Chen, Y .et al.Degradation mechanism of AlGaN/GaN HEMTs during high temperature operation stress.Semicond. Sci. Technol.33, 015019 (2017)

    2017

  55. [63]

    & Morkoc, H

    Aktas, O., Fan, Z., Mohammad, S., Botchkarev, A. & Morkoc, H. High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors.Appl. Phys. Lett.69, 3872–3874 (1996)

    1996

  56. [64]

    & Obloh, H

    Hilsenbeck, J., Nebauer, E., Wurfl, J., Trankle, G. & Obloh, H. Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts.Electron. Lett.36, 1 (2000)

    2000

  57. [65]

    Yuan, M.et al.Enhancement-mode GaN transistor technology for harsh environment operation.IEEE Electron Device Lett.44, 1068–1071 (2023)

    2023

  58. [66]

    K.et al.p-GaN Gated HEMT with 770 I ON/I OFF Ratio Operating at 800° C.IEEE Electron Device Lett

    Visvkarma, A. K.et al.p-GaN Gated HEMT with 770 I ON/I OFF Ratio Operating at 800° C.IEEE Electron Device Lett. (2025)

    2025

  59. [67]

    Herfurth, P.et al.Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 ◦C) Electronics.IEEE Electron Device Lett.34, 496–498, DOI: 10.1109/LED.2013.2245625 (2013)

    2013 doi

  60. [68]

    Electron Devices Soc.7, 931–935 (2019)

    Kargarrazi, S.et al.Stable operation of AlGaN/GaN HEMTs for 25 h at 400° C in air.IEEE J. Electron Devices Soc.7, 931–935 (2019)

    2019

  61. [69]

    IEEE Electron Device Lett.44, 899–902 (2023)

    Wang, R.et al.Dynamic Performance Analysis of Logic Gates Based on p-GaN/AlGaN/GaN HEMTs at High Temperature. IEEE Electron Device Lett.44, 899–902 (2023)

    2023

  62. [70]

    74.Takahashi, K., Yoshikawa, A

    Mutsafi, Z.et al.High-temperature sensitivity of a depletion-mode AlGaN/GaN MIS-HEMT.IEEE Transactions on Electron Devices68, 5695–5700 (2021). 74.Takahashi, K., Yoshikawa, A. & Sandhu, A. Wide bandgap semiconductors.Verlag Berlin Heidelberg(2007)

    2021

  63. [71]

    & Asif Khan, M

    Shur, M., Gelmont, B. & Asif Khan, M. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN.J. electronic materials25, 777–785 (1996). 14/17

    1996

  64. [72]

    Daumiller, I., Kirchner, C., Kamp, M., Ebeling, K. J. & Kohn, E. Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs.IEEE Electron Device Lett.20, 448–450 (1999)

    1999

  65. [73]

    IEEE Electron Device Lett.28, 328–331 (2007)

    Cai, Y .et al.High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits. IEEE Electron Device Lett.28, 328–331 (2007)

    2007

  66. [74]

    Wang, X.et al.Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress.Appl. Phys. Lett.122(2023)

    2023

  67. [75]

    Reliab.55, 1687–1691 (2015)

    Fleury, C.et al.High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.Microelectron. Reliab.55, 1687–1691 (2015)

    2015

  68. [76]

    A.et al.AlGaN High Electron Mobility Transistor for High-Temperature Logic.J

    Klein, B. A.et al.AlGaN High Electron Mobility Transistor for High-Temperature Logic.J. Microelectron. Electron. Packag.20(2023)

    2023

  69. [77]

    W., Zhao, X

    Chung, J. W., Zhao, X. & Palacios, T. Estimation of Trap Density in AlGaN/GaN HEMTs from Subthreshold Slope Study. In2007 65th Annual Device Research Conference, 111–112 (2007)

    2007

  70. [78]

    Medjdoub, F.et al.GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325° C.The 5th Eur. Microw. Integr. Circuits Conf.37–40 (2010)

    2010

  71. [79]

    & Reiner, R

    Unger, C., Mocanul, M., Pfost, M., Waltereit, P. & Reiner, R. Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs.2016 Int. Semicond. Conf. (CAS)127–130 (2016)

    2016

  72. [81]

    In2019 International Conference on IC Design and Technology (ICICDT), 1–4 (IEEE, 2019)

    Cui, M.et al.The impact of etch depth of D-mode AlGaN/GaN MIS-HEMTs on DC and Ac characteristics of 10 V input direct-coupled FET logic (DCFL) inverters. In2019 International Conference on IC Design and Technology (ICICDT), 1–4 (IEEE, 2019)

    2019

  73. [82]

    In2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 1–2 (2023)

    Xie, Q.et al.Towards DTCO in high temperature GaN-on-Si technology: Arithmetic logic unit at 300° C and CAD framework up to 500° C. In2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 1–2 (2023)

    2023

  74. [83]

    & Palacios, T

    Yuan, M., Xie, Q., Niroula, J., Chowdhury, N. & Palacios, T. GaN memory operational at 300° C.IEEE Electron Device Lett.43, 2053–2056 (2022)

  75. [84]

    H.et al.p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.Appl

    Ng, Y . H.et al.p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.Appl. Phys. Lett.124(2024)

    2024

  76. [85]

    In2024 Device Research Conference (DRC), 1–2 (2024)

    Luo, S.et al.GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350° C. In2024 Device Research Conference (DRC), 1–2 (2024)

    2024

  77. [86]

    Chowdhury, N.et al.Regrowth-Free GaN-Based Complementary Logic on a Si Substrate.IEEE Electron Device Lett.41, 820–823 (2020)

    2020

  78. [87]

    & Zehnder, D

    Chu, R., Cao, Y ., Chen, M., Li, R. & Zehnder, D. An experimental demonstration of GaN CMOS technology.IEEE Electron Device Lett.37, 269–271 (2016)

    2016

  79. [88]

    Cuerdo, R.et al.High-temperature microwave performance of submicron AlGaN/GaN HEMTs on SiC.IEEE Electron Device Lett.30, 808–810 (2009)

    2009

  80. [89]

    Ottaviani, A.et al.Evaluation of high-temperature high-frequency GaN-Based LC-oscillator components.IEEE Transactions on Electron Devices67, 4587–4591 (2020)

    2020

  81. [90]

    & Mizutani, T

    Akita, M., Kishimoto, S. & Mizutani, T. High-frequency measurements of AlGaN/GaN HEMTs at high temperatures. IEEE Electron Device Lett.22, 376–377 (2001)

    2001

  82. [91]

    & Griffin, R

    Xue, H., Storey, C., Noël, J.-P. & Griffin, R. Measurement and Modeling of GaN HEMTs Operating at 500° C. In2024 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 532–536 (IEEE, 2024)

    2024

  83. [92]

    & Zeng, Y

    Cui, P. & Zeng, Y . Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications.Sci. Reports12, 16683 (2022)

    2022

  84. [93]

    Xiong, Y .et al.GaN Bootstrapping Amplifier IC Operating at up to 800° C Temperature.IEEE Electron Device Lett. (2025)

    2025

  85. [94]

    IEEE Access7, 184375–184384 (2019)

    Cui, M.et al.Monolithic GaN half-bridge stages with integrated gate drivers for high temperature DC-DC buck converters. IEEE Access7, 184375–184384 (2019). 15/17

    2019

  86. [95]

    & Ali, M

    Perrin, R., Quentin, N., Allard, B., Martin, C. & Ali, M. High-temperature GaN active-clamp flyback converter with resonant operation mode.IEEE J. emerging selected topics power electronics4, 1077–1085 (2016)

    2016

  87. [96]

    & Cheng, Z

    Shi, N., Wang, K., Zhou, B., Weng, J. & Cheng, Z. Optimization AlGaN/GaN HEMT with field plate structures. Micromachines13, 702 (2022)

    2022

  88. [97]

    R.et al.Degradation Analysis of InAlN/GaN Transistors under Simulated Venus Surface Conditions.IEEE Transactions on Electron Devices(2025)

    Eisner, S. R.et al.Degradation Analysis of InAlN/GaN Transistors under Simulated Venus Surface Conditions.IEEE Transactions on Electron Devices(2025)

    2025

  89. [98]

    Buffolo, M.et al.Review and outlook on GaN and SiC power devices: Industrial state-of-the-art, applications, and perspectives.IEEE Transactions on Electron Devices71, 1344–1355 (2024)

    2024

  90. [99]

    43, 1842–1845 (2022)

    Yuan, M.et al.GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform.IEEE Electron Device Lett. 43, 1842–1845 (2022)

    2022

  91. [100]

    Niroula, J.Thermally Hardened RF GaN HEMTs in Extreme Environments. Ph.D. thesis, Massachusetts Institute of Technology (2025)

    2025

  92. [101]

    Song, J., Lu, W., Flynn, J. S. & Brandes, G. R. Pt-AlGaN/ GaN Schottky diodes operated at 800 C for hydrogen sensing. Appl. Phys. Lett.87(2005)

    2005

  93. [102]

    & Zhu, W

    Lee, H., Ryu, H. & Zhu, W. Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation.Appl. Phys. Lett.122(2023)

    2023

  94. [103]

    Guhel, Y .et al.Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs.Microw. Opt. Technol. Lett.34, 4–6 (2002)

    2002

  95. [104]

    S., Alam, S., Jarndal, A., Gaquiere, C

    Jui, F. S., Alam, S., Jarndal, A., Gaquiere, C. & Alim, M. A. Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT.J. Comput. Electron.23, 42–50 (2024)

    2024

  96. [105]

    & Kobayashi, N

    Maeda, N., Saitoh, T., Tsubaki, K., Nishida, T. & Kobayashi, N. Superior pinch-off characteristics at 400 C in AlGaN/GaN heterostructure field effect transistors.Jpn. journal applied physics38, L987 (1999)

    1999

  97. [106]

    & Jimbo, T

    Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T. Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors.Appl. physics letters82, 3110–3112 (2003)

    2003

  98. [107]

    New Circuits Syst

    Hassan, A.et al.Stability of GaN150-based HEMT in high temperature up to 400° C.2017 15th IEEE Int. New Circuits Syst. Conf. (NEWCAS)133–136 (2017)

    2017

  99. [108]

    Adachi, N.et al.High temperature operation of AlGaN/GaN HEMT.IEEE MTT-S Int. Microw. Symp. Dig. 2005. 507–510 (2005)

    2005

  100. [109]

    Reliab.51, 1717–1720 (2011)

    Marcon, D.et al.GaN-based HEMTs tested under high temperature storage test.Microelectron. Reliab.51, 1717–1720 (2011)

    2011

  101. [110]

    Gaska, R.et al.High-temperature performance of AlGaN/GaN HFETs on SiC substrates.IEEE Electron Device Lett.18, 492–494 (1997)

    1997

  102. [111]

    In CS MANTECH Conference, vol

    Hatano, M.et al.Comparative high-temperature DC characterization of HEMTs with GaN and AlGaN channel layers. In CS MANTECH Conference, vol. 101 (Citeseer, 2010)

    2010

  103. [112]

    Fontsere, A.et al.A HfO 2 based 800V/300 C Au-Free AlGaN/GaN-on-Si HEMT Technology.2012 24th Int. Symp. on Power Semicond. Devices ICs37–40 (2012)

    2012

  104. [113]

    Werquin, M.et al.High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si (111) substrate. Microw. Opt. Technol. Lett.48, 2303–2305 (2006)

    2006

  105. [114]

    & Changzhi, L

    Juan, Y ., Xiaoling, Z. & Changzhi, L. Study on the reliability of AlGaN/GaN HEMTs at high temperature.2011 Int. Conf. on Electr. Inf. Control. Eng.774–777 (2011)

    2011

  106. [115]

    Sokolovskij, R.et al.Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor.Sensors Actuators B: Chem.274, 636–644 (2018)

    2018

  107. [116]

    Li, F.et al.Monolithic Si-based AlGaN/GaN MIS-HEMTs comparator and its high temperature characteristics.Appl. Sci. 11, 12057 (2021). Acknowledgments This work was sponsored in part by the Air Force Office of Scientific Research (AFOSR) under award no. FA9550-22-1-0367 and Lock...

    2021

Pith tools

Reviewed July 7, 2026 · model on record in the stance chip above.