Transconductance measurements in multilayer WSe2 reveal inter-valley carrier redistribution quantified by a valley susceptibility of approximately 0.20 V^{-1} near threshold at room temperature.
Schmidtet al., Biaxial strain transfer in monolayer MoS2 and WSe2 transistor structures, ACS Appl
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Transconductance as a Probe of Valley Thermodynamics in Multilayer WSe$_2$
Transconductance measurements in multilayer WSe2 reveal inter-valley carrier redistribution quantified by a valley susceptibility of approximately 0.20 V^{-1} near threshold at room temperature.